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Liu, Xiaohui, Dou, Xiaoming, Sugiyama, Mutsumi (2012) Photoluminescence Study of Deep Levels in CuInS2Thin Films Grown by Sulfurization Using Ditertiarybutylsulfide. Japanese Journal of Applied Physics, 51 (12) 122403 doi:10.7567/jjap.51.122403

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Reference TypeJournal (article/letter/editorial)
TitlePhotoluminescence Study of Deep Levels in CuInS2Thin Films Grown by Sulfurization Using Ditertiarybutylsulfide
JournalJapanese Journal of Applied Physics
AuthorsLiu, XiaohuiAuthor
Dou, XiaomingAuthor
Sugiyama, MutsumiAuthor
Year2012 (December 1)Volume51
Issue12
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjap.51.122403Search in ResearchGate
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Mindat Ref. ID15041997Long-form Identifiermindat:1:5:15041997:8
GUID0
Full ReferenceLiu, Xiaohui, Dou, Xiaoming, Sugiyama, Mutsumi (2012) Photoluminescence Study of Deep Levels in CuInS2Thin Films Grown by Sulfurization Using Ditertiarybutylsulfide. Japanese Journal of Applied Physics, 51 (12) 122403 doi:10.7567/jjap.51.122403
Plain TextLiu, Xiaohui, Dou, Xiaoming, Sugiyama, Mutsumi (2012) Photoluminescence Study of Deep Levels in CuInS2Thin Films Grown by Sulfurization Using Ditertiarybutylsulfide. Japanese Journal of Applied Physics, 51 (12) 122403 doi:10.7567/jjap.51.122403
In(2012, December) Japanese Journal of Applied Physics Vol. 51 (12) Japan Society of Applied Physics

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Liu, Xiaohui, Dou, Xiaoming, Sugiyama, Mutsumi (2012) Photoluminescence Study of Deep Levels in CuInS$_{2}$ Thin Films Grown by Sulfurization Using Ditertiarybutylsulfide. Japanese Journal of Applied Physics, 51. 122403 doi:10.1143/jjap.51.122403
Liu, Xiaohui, Fujiwara, Chika, Dou, Xiaoming, Chichibu, Shigefusa F., Sugiyama, Mutsumi (2012) Photoluminescence Study of Defect Levels in CuInS2Thin Films Grown by Sulfurization Using Ditertiarybutylsulfide. Japanese Journal of Applied Physics, 51 (3) 31202 doi:10.7567/jjap.51.031202
Liu, Xiaohui, Fujiwara, Chika, Dou, Xiaoming, Chichibu, Shigefusa F., Sugiyama, Mutsumi (2012) Photoluminescence Study of Defect Levels in CuInS$_{2}$ Thin Films Grown by Sulfurization Using Ditertiarybutylsulfide. Japanese Journal of Applied Physics, 51. 31202 doi:10.1143/jjap.51.031202
Liu, X. H., Dou, X. M., Sugiyama, M. (2012) Photoluminescence studies in CuInS2 thin films grown by sulfurization using ditertiarybutylsulfide. Journal of Applied Physics, 112 (12). 123521pp. doi:10.1063/1.4771928
Sugiyama, Mutsumi, Fujiwara, Chika, Shoji, Ryuki, Chichibu, Shigefusa (2011) Sulfurization Growth of CuInS2Thin Film Using Ditertiarybutylsulfide as a Less Hazardous Source. Japanese Journal of Applied Physics, 50 (6) 65503 doi:10.7567/jjap.50.065503
Sugiyama, Mutsumi, Fujiwara, Chika, Shoji, Ryuki, Chichibu, Shigefusa (2011) Sulfurization Growth of CuInS2Thin Film Using Ditertiarybutylsulfide as a Less Hazardous Source. Japanese Journal of Applied Physics, 50 (6) 65503 doi:10.1143/jjap.50.065503
Liu, Xiaohui, Han, Anjun, Liu, Zhengxin, Sugiyama, Mutsumi (2016) Effects of the CuS phase on the growth and properties of CuInS2thin films. Japanese Journal of Applied Physics, 55 (1) 15501 doi:10.7567/jjap.55.015501
Kanai, Ayaka, Araki, Hideaki, Ohashi, Ryota, Sugiyama, Mutsumi (2020) Sulfurization of Cu2(Sn,Ge)S3 thin films deposited by co-evaporation. Japanese Journal of Applied Physics, 59. doi:10.7567/1347-4065/ab4d04
Fujiwara, Chika, Sato, Tomoaki, Kawasaki, Yoshifumi, Sugiyama, Mutsumi, Chichibu, Shigefusa F. (2011) Growth of Cu(In,Al)(S,Se)2Thin Films by Selenization and Sulfurization for a Wide Bandgap Absorber. Japanese Journal of Applied Physics, 50 (5) 5 doi:10.7567/jjap.50.05fb07
Sato, Tomoaki, Kawasaki, Yoshifumi, Sugiyama, Mutsumi, Chichibu, Shigefusa F. (2011) Morphological and Structural Changes in Cu(In,Ga)Se2Thin Films by Selenization Using Diethylselenide. Japanese Journal of Applied Physics, 50 (5) 5 doi:10.7567/jjap.50.05fb05
Takisawa, Kota, Sugiyama, Mutsumi (2022) Tin monosulfide (SnS) epitaxial films grown by RF magnetron sputtering and sulfurization on MgO(100) substrates. Japanese Journal of Applied Physics, 61 (2) 25504 doi:10.35848/1347-4065/ac3e16
 
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