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Imai, Shigeru, Kato, Hiroki, Hiraoka, Yasuhiro (2012) Stability Diagrams of Single-Common-Gate Double-Dot Single-Electron Transistors with Arbitrary Junction and Gate Capacitances. Japanese Journal of Applied Physics, 51 (12) 124301 doi:10.7567/jjap.51.124301

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Reference TypeJournal (article/letter/editorial)
TitleStability Diagrams of Single-Common-Gate Double-Dot Single-Electron Transistors with Arbitrary Junction and Gate Capacitances
JournalJapanese Journal of Applied Physics
AuthorsImai, ShigeruAuthor
Kato, HirokiAuthor
Hiraoka, YasuhiroAuthor
Year2012 (December 1)Volume51
Issue12
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjap.51.124301Search in ResearchGate
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Mindat Ref. ID15042008Long-form Identifiermindat:1:5:15042008:0
GUID0
Full ReferenceImai, Shigeru, Kato, Hiroki, Hiraoka, Yasuhiro (2012) Stability Diagrams of Single-Common-Gate Double-Dot Single-Electron Transistors with Arbitrary Junction and Gate Capacitances. Japanese Journal of Applied Physics, 51 (12) 124301 doi:10.7567/jjap.51.124301
Plain TextImai, Shigeru, Kato, Hiroki, Hiraoka, Yasuhiro (2012) Stability Diagrams of Single-Common-Gate Double-Dot Single-Electron Transistors with Arbitrary Junction and Gate Capacitances. Japanese Journal of Applied Physics, 51 (12) 124301 doi:10.7567/jjap.51.124301
In(2012, December) Japanese Journal of Applied Physics Vol. 51 (12) Japan Society of Applied Physics

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Imai, Shigeru, Kato, Hiroki, Hiraoka, Yasuhiro (2012) Stability Diagrams of Single-Common-Gate Double-Dot Single-Electron Transistors with Arbitrary Junction and Gate Capacitances. Japanese Journal of Applied Physics, 51. 124301 doi:10.1143/jjap.51.124301
Imai, Shigeru, Iwasa, Noriyuki (2015) Stability diagrams and turnstile operations of single-common-gate triple-dot single-electron devices with outer junction capacitances different from inner ones. Japanese Journal of Applied Physics, 54 (6) 64001 doi:10.7567/jjap.54.064001
Imai, Shigeru (2011) Stability Diagrams of Triple-Dot Single-Electron Device with Single Common Gate. Japanese Journal of Applied Physics, 50 (3) 34302 doi:10.7567/jjap.50.034302
Imai, Shigeru, Ito, Masato (2018) Anomalous single-electron transfer in common-gate quadruple-dot single-electron devices with asymmetric junction capacitances. Japanese Journal of Applied Physics, 57 (6) 64001 doi:10.7567/jjap.57.064001
Imai, Shigeru, Nakajima, Atsushi, Kobata, Teppei (2015) Single-electron pumping in single-common-gate triple-dot devices with asymmetric gate capacitances. Japanese Journal of Applied Physics, 54 (10) 104001 doi:10.7567/jjap.54.104001
Imai, Shigeru, Moriguchi, Shin-ichi (2014) Single-common-gate triple-dot single-electron devices with side gate capacitances larger than the central one. Japanese Journal of Applied Physics, 53 (9) 94002 doi:10.7567/jjap.53.094002
Imai, Shigeru (2011) Stability Diagrams of Triple-Dot Single-Electron Device with Single Common Gate. Japanese Journal of Applied Physics, 50. 34302 doi:10.1143/jjap.50.034302
Imai, Shigeru, Ito, Yuma (2019) Single-electron pumping in single-common-gate quadruple-dot devices with asymmetric gate capacitances. Japanese Journal of Applied Physics, 58 (3) 34001 doi:10.7567/1347-4065/aaf856
Imai, Shigeru, Kawamura, Daichi (2009) Analytical Study on a Single-Electron Device with Three Islands Connected to One Gate Electrode. Japanese Journal of Applied Physics, 48 (12) 124502 doi:10.1143/jjap.48.124502
Imai, Shigeru, Kawamura, Daichi (2008) Analytical Study on a Single Electron Device with Two Islands Connected to One Gate Electrode. Japanese Journal of Applied Physics, 47 (12) 9003-9009 doi:10.1143/jjap.47.9003
Chou, Chia-Hsin, Lee, I-Che, Lei, Dai-Che, Cheng, Huang-Chung (2014) Planar junctionless poly-Si thin-film transistors with single gate and double gate. Japanese Journal of Applied Physics, 53 (6) 6 doi:10.7567/jjap.53.06je07
 
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