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Hamada, Masayuki, Hasegawa, Yukio (2012) Development of Scanning Tunneling Potentiometry for Semiconducting Samples. Japanese Journal of Applied Physics, 51 (12) 125202 doi:10.7567/jjap.51.125202

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Reference TypeJournal (article/letter/editorial)
TitleDevelopment of Scanning Tunneling Potentiometry for Semiconducting Samples
JournalJapanese Journal of Applied Physics
AuthorsHamada, MasayukiAuthor
Hasegawa, YukioAuthor
Year2012 (December 1)Volume51
Issue12
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjap.51.125202Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15042013Long-form Identifiermindat:1:5:15042013:4
GUID0
Full ReferenceHamada, Masayuki, Hasegawa, Yukio (2012) Development of Scanning Tunneling Potentiometry for Semiconducting Samples. Japanese Journal of Applied Physics, 51 (12) 125202 doi:10.7567/jjap.51.125202
Plain TextHamada, Masayuki, Hasegawa, Yukio (2012) Development of Scanning Tunneling Potentiometry for Semiconducting Samples. Japanese Journal of Applied Physics, 51 (12) 125202 doi:10.7567/jjap.51.125202
In(2012, December) Japanese Journal of Applied Physics Vol. 51 (12) Japan Society of Applied Physics

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Hamada, Masayuki, Hasegawa, Yukio (2012) Development of Scanning Tunneling Potentiometry for Semiconducting Samples. Japanese Journal of Applied Physics, 51. 125202 doi:10.1143/jjap.51.125202
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Morita, Seizo, Maita, Yutaka, Takahashi, Yoshiaki (1989) Scanning Tunneling Potentiometry/Spectroscopy (STP/STS) Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l2034
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