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Mentek, Romain, Gelloz, Bernard, Koshida, Nobuyoshi (2012) Photovoltaic Property of Wide-Gap Nanocrystalline Silicon Layers. Japanese Journal of Applied Physics, 51 (2) 2 doi:10.1143/jjap.51.02bp05

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Reference TypeJournal (article/letter/editorial)
TitlePhotovoltaic Property of Wide-Gap Nanocrystalline Silicon Layers
JournalJapanese Journal of Applied Physics
AuthorsMentek, RomainAuthor
Gelloz, BernardAuthor
Koshida, NobuyoshiAuthor
Year2012 (February 20)Volume51
Issue2
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.51.02bp05Search in ResearchGate
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Mindat Ref. ID15042145Long-form Identifiermindat:1:5:15042145:2
GUID0
Full ReferenceMentek, Romain, Gelloz, Bernard, Koshida, Nobuyoshi (2012) Photovoltaic Property of Wide-Gap Nanocrystalline Silicon Layers. Japanese Journal of Applied Physics, 51 (2) 2 doi:10.1143/jjap.51.02bp05
Plain TextMentek, Romain, Gelloz, Bernard, Koshida, Nobuyoshi (2012) Photovoltaic Property of Wide-Gap Nanocrystalline Silicon Layers. Japanese Journal of Applied Physics, 51 (2) 2 doi:10.1143/jjap.51.02bp05
In(2012, February) Japanese Journal of Applied Physics Vol. 51 (2) Japan Society of Applied Physics

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Mentek, Romain, Gelloz, Bernard, Koshida, Nobuyoshi (2012) Photovoltaic Property of Wide-Gap Nanocrystalline Silicon Layers. Japanese Journal of Applied Physics, 51 (2) 2 doi:10.7567/jjap.51.02bp05
Mentek, Romain, Gelloz, Bernard, Koshida, Nobuyoshi (2010) Fabrication and Optical Characterization of Self-Standing Wide-Gap Nanocrystalline Silicon Layers. Japanese Journal of Applied Physics, 49 (4) 4 doi:10.1143/jjap.49.04dg22
Gelloz, Bernard, Mentek, Romain, Koshida, Nobuyoshi (2009) Specific Blue Light Emission from Nanocrystalline Porous Si Treated by High-Pressure Water Vapor Annealing. Japanese Journal of Applied Physics, 48 (4) 4 doi:10.1143/jjap.48.04c119
Gelloz, Bernard, Koshida, Nobuyoshi (2004) High Performance Electroluminescence from Nanocrystalline Silicon with Carbon Buffer. Japanese Journal of Applied Physics, 43 (4) 1981-1985 doi:10.1143/jjap.43.1981
Gelloz, Bernard, Sato, Masataka, Koshida, Nobuyoshi (2008) Cavity Effect in Nanocrystalline Porous Silicon Ballistic Lighting Device. Japanese Journal of Applied Physics, 47 (4) 2902-2905 doi:10.1143/jjap.47.2902
Gelloz, Bernard, Mentek, Romain, Koshida, Nobuyoshi (2012) Optical properties of phosphorescent nano-silicon electrochemically doped with terbium. physica status solidi (c), 9 (12). 2318-2321 doi:10.1002/pssc.201200226
Gelloz, Bernard, Sugawara, Masahito, Koshida, Nobuyoshi (2008) Acoustic Wave Manipulation by Phased Operation of Two-Dimensionally Arrayed Nanocrystalline Silicon Ultrasonic Emitters. Japanese Journal of Applied Physics, 47 (4) 3123-3126 doi:10.1143/jjap.47.3123
Gelloz, Bernard, Koshida, Nobuyoshi (2007) Highly Efficient and Stable Photoluminescence of Nanocrystalline Porous Silicon by Combination of Chemical Modification and Oxidation under High Pressure. Japanese Journal of Applied Physics, 46 (4) 2429-2433 doi:10.1143/jjap.46.2429
Gelloz, Bernard, Kanda, Takayuki, Uchida, Tetsuya, Niibe, Masao, Kojima, Akira, Koshida, Nobuyoshi (2005) Electroluminescence Enhancement Assisted with Ballistic Electron Excitation in Nanocrystalline Silicon Diodes. Japanese Journal of Applied Physics, 44 (4) 2676-2679 doi:10.1143/jjap.44.2676
Koshida, Nobuyoshi, Ohta, Toshiyuki, Hirano, Yoshiyuki, Mentek, Romain, Gelloz, Bernard (2011) Functional Device Applications of Nanosilicon. Key Engineering Materials, 470. 20-26 doi:10.4028/www.scientific.net/kem.470.20
Gelloz, Bernard, Koshida, Nobuyoshi (2009) Long-lived blue phosphorescence of oxidized and annealed nanocrystalline silicon. Applied Physics Letters, 94 (20). 201903pp. doi:10.1063/1.3140570
 
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