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Kim, Young Shil, Ha, Min Woo, Kim, Min Ki, Han, Min Koo (2012) AlGaN/GaN Schottky Barrier Diode on Si Substrate Employing NiOx/Ni/Au Contact. Japanese Journal of Applied Physics, 51 (9) 9 doi:10.7567/jjap.51.09mc01

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Reference TypeJournal (article/letter/editorial)
TitleAlGaN/GaN Schottky Barrier Diode on Si Substrate Employing NiOx/Ni/Au Contact
JournalJapanese Journal of Applied Physics
AuthorsKim, Young ShilAuthor
Ha, Min WooAuthor
Kim, Min KiAuthor
Han, Min KooAuthor
Year2012 (September 1)Volume51
Issue9
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjap.51.09mc01Search in ResearchGate
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Mindat Ref. ID15043345Long-form Identifiermindat:1:5:15043345:5
GUID0
Full ReferenceKim, Young Shil, Ha, Min Woo, Kim, Min Ki, Han, Min Koo (2012) AlGaN/GaN Schottky Barrier Diode on Si Substrate Employing NiOx/Ni/Au Contact. Japanese Journal of Applied Physics, 51 (9) 9 doi:10.7567/jjap.51.09mc01
Plain TextKim, Young Shil, Ha, Min Woo, Kim, Min Ki, Han, Min Koo (2012) AlGaN/GaN Schottky Barrier Diode on Si Substrate Employing NiOx/Ni/Au Contact. Japanese Journal of Applied Physics, 51 (9) 9 doi:10.7567/jjap.51.09mc01
In(2012, September) Japanese Journal of Applied Physics Vol. 51 (9) Japan Society of Applied Physics

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Kim, Young Shil, Ha, Min Woo, Kim, Min Ki, Han, Min Koo (2012) AlGaN/GaN Schottky Barrier Diode on Si Substrate Employing NiO$_{x}$/Ni/Au Contact. Japanese Journal of Applied Physics, 51. 9 doi:10.1143/jjap.51.09mc01
Ha, Min-Woo, Hwang, Dae Won, Hahn, Cheol-Koo, Kim, Young-Shil (2012) 1-kV AlGaN/GaN schottky barrier diode on a Si substrate by oxidizing the Schottky contact. Journal of the Korean Physical Society, 60 (10). 1629-1633 doi:10.3938/jkps.60.1629
Seok, Ogyun, Ahn, Woojin, Han, Min-Koo, Ha, Min-Woo (2012) New AlGaN/GaN High Electron Mobility Transistors Employing Charge Accumulation in Multiple Al2O3/Ga2O3Stacks. Japanese Journal of Applied Physics, 51 (10) 101001 doi:10.7567/jjap.51.101001
Choi, Young-Hwan, Kim, Sun-Jae, Kim, Young-Shil, Kim, Min-Ki, Seok, Ogyun, Han, Min-Koo (2010) High Voltage AlGaN/GaN High-Electron-Mobility Transistors Employing Surface Treatment by Deposition and Removal of Silicon Dioxide Layer. Japanese Journal of Applied Physics, 49 (4) 4 doi:10.1143/jjap.49.04df06
Lee, Seung-Chul, Ha, Min-Woo, Lim, Ji-Yong, Her, Jin-Cherl, Seo, Kwang-Seok, Han, Min-Koo (2006) Suppression of Leakage Current of Ni/Au Schottky Barrier Diode Fabricated on AlGaN/GaN Heterostructure by Oxidation. Japanese Journal of Applied Physics, 45 (4) 3398-3400 doi:10.1143/jjap.45.3398
Ha, Min-Woo, Choi, Young-Hwan, Lim, Jiyong, Han, Min-Koo (2007) SiO2Passivation Effects on the Leakage Current in AlGaN/GaN High-Electron-Mobility Transistors Employing Additional Schottky Gate. Japanese Journal of Applied Physics, 46 (4) 2291-2295 doi:10.1143/jjap.46.2291
Kim, Young-Shil, Lim, Ji-Yong, Kim, Min-Ki, Han, Min-Koo (2011) High breakdown voltage AlGaN/GaN HEMT by employing selective fluoride plasma treatment. physica status solidi (c), 8 (2). 453-456 doi:10.1002/pssc.201000548
Seok, Ogyun, Ahn, Woojin, Han, Min-Koo, Ha, Min-Woo (2012) New AlGaN/GaN High Electron Mobility Transistors Employing Charge Accumulation in Multiple Al$_{2}$O$_{3}$/Ga$_{2}$O$_{3}$ Stacks. Japanese Journal of Applied Physics, 51. 101001 doi:10.1143/jjap.51.101001
Ha, Min-Woo, Roh, Cheong Hyun, Hwang, Dae Won, Choi, Hong Goo, Song, Hong Joo, Lee, Jun Ho, Park, Jung Ho, Seok, Ogyun, Lim, Jiyong, Han, Min-Koo, Hahn, Cheol-Koo (2011) High-Voltage Schottky Barrier Diode on Silicon Substrate. Japanese Journal of Applied Physics, 50 (6) 6 doi:10.7567/jjap.50.06gf17
Kim, Yoon-Hyun, Osada, Minoru, Kim, Hong-Ki, Nam, Song-Min (2012) Percolative BaTiO3/Carbon-Nanotube Composite Films Employing Aerosol Deposition. Japanese Journal of Applied Physics, 51 (9) 9 doi:10.7567/jjap.51.09lc07
Ha, Min-Woo, Lee, Seung-Chul, Her, Jin-Cherl, Seo, Kwang-Seok, Han, Min-Koo (2005) AlGaN/GaN High-Electron-Mobility Transistor Employing an Additional Gate for High-Voltage Switching Applications. Japanese Journal of Applied Physics, 44 (9) 6385-6388 doi:10.1143/jjap.44.6385
 
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