Reference Type | Journal (article/letter/editorial) |
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Title | Effects of Photoirradiation on Electrical Characteristics of Chemical Vapor Deposited Diamond Schottkey Barrier Diode |
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Journal | Japanese Journal of Applied Physics |
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Authors | Paosawatyanyong, Boonchoat | Author |
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Bhanthumnavin, Worawan | Author |
Year | 2012 (September 1) | Volume | 51 |
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Issue | 9 |
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Publisher | Japan Society of Applied Physics |
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DOI | doi:10.7567/jjap.51.09mf05Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 15043367 | Long-form Identifier | mindat:1:5:15043367:7 |
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GUID | 0 |
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Full Reference | Paosawatyanyong, Boonchoat, Bhanthumnavin, Worawan (2012) Effects of Photoirradiation on Electrical Characteristics of Chemical Vapor Deposited Diamond Schottkey Barrier Diode. Japanese Journal of Applied Physics, 51 (9) 9 doi:10.7567/jjap.51.09mf05 |
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Plain Text | Paosawatyanyong, Boonchoat, Bhanthumnavin, Worawan (2012) Effects of Photoirradiation on Electrical Characteristics of Chemical Vapor Deposited Diamond Schottkey Barrier Diode. Japanese Journal of Applied Physics, 51 (9) 9 doi:10.7567/jjap.51.09mf05 |
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In | (2012, September) Japanese Journal of Applied Physics Vol. 51 (9) Japan Society of Applied Physics |
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