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Lin, Chia-Hung, Akasaka, Tetsuya, Yamamoto, Hideki (2014) N-face GaN($000\bar{1}$) films grown by group-III-source flow-rate modulation epitaxy. Japanese Journal of Applied Physics, 53 (11) 11 doi:10.7567/jjap.53.11rc01

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Reference TypeJournal (article/letter/editorial)
TitleN-face GaN($000\bar{1}$) films grown by group-III-source flow-rate modulation epitaxy
JournalJapanese Journal of Applied Physics
AuthorsLin, Chia-HungAuthor
Akasaka, TetsuyaAuthor
Yamamoto, HidekiAuthor
Year2014 (November 1)Volume53
Issue11
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjap.53.11rc01Search in ResearchGate
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Mindat Ref. ID15043523Long-form Identifiermindat:1:5:15043523:7
GUID0
Full ReferenceLin, Chia-Hung, Akasaka, Tetsuya, Yamamoto, Hideki (2014) N-face GaN($000\bar{1}$) films grown by group-III-source flow-rate modulation epitaxy. Japanese Journal of Applied Physics, 53 (11) 11 doi:10.7567/jjap.53.11rc01
Plain TextLin, Chia-Hung, Akasaka, Tetsuya, Yamamoto, Hideki (2014) N-face GaN($000\bar{1}$) films grown by group-III-source flow-rate modulation epitaxy. Japanese Journal of Applied Physics, 53 (11) 11 doi:10.7567/jjap.53.11rc01
In(2014, November) Japanese Journal of Applied Physics Vol. 53 (11) Japan Society of Applied Physics

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Lin, Chia-Hung, Akasaka, Tetsuya, Yamamoto, Hideki (2016) N-face GaN$(000\bar{1})$ films with hillock-free smooth surfaces grown by group-III-source flow-rate modulation epitaxy. Japanese Journal of Applied Physics, 55 (4) 4 doi:10.7567/jjap.55.04ej01
Akasaka, Tetsuya, Lin, Chia-Hung, Yamamoto, Hideki, Kumakura, Kazuhide (2017) Surface supersaturation in flow-rate modulation epitaxy of GaN. Journal of Crystal Growth, 468. 821-826 doi:10.1016/j.jcrysgro.2016.11.107
Akasaka, Tetsuya, Yamamoto, Hideki (2014) Nucleus and spiral growth mechanisms of nitride semiconductors in metalorganic vapor phase epitaxy. Japanese Journal of Applied Physics, 53 (10) 100201 doi:10.7567/jjap.53.100201
Yayama, Tomoe, Gao, Yanlin, Okada, Susumu, Chikyow, Toyohiro (2017) Polarization modulation of nanotrenches in GaN (0001)/$(000\bar{1})$ by surface hydrogenation. Japanese Journal of Applied Physics, 56 (11) 111002 doi:10.7567/jjap.56.111002
Nonoda, Ryohei, Shojiki, Kanako, Tanikawa, Tomoyuki, Kuboya, Shigeyuki, Katayama, Ryuji, Matsuoka, Takashi (2016) Effects of Mg/Ga and V/III source ratios on hole concentration of N-polar $(000\bar{1})$ p-type GaN grown by metalorganic vapor phase epitaxy. Japanese Journal of Applied Physics, 55 (5) 5 doi:10.7567/jjap.55.05fe01
Akasaka, Tetsuya, Kobayashi, Yasuyuki, Makimoto, Toshiki (2007) Growth of nonpolar AlN (112¯0) and (11¯00) films on SiC substrates by flow-rate modulation epitaxy. Applied Physics Letters, 90 (12). 121919pp. doi:10.1063/1.2716207
Makimoto, Toshiki, Kobayashi, Naoki, Horikoshi, Yoshiji (1986) Modulation Doped n-AlGaAs/GaAs Heterostructures Grown by Flow-rate Modulation Epitaxy. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l513
Suzuki, Kyoichi, Akasaka, Tetsuya (2018) Landau level quantization with gate tuning in an AlN/GaN single heterostructure. Japanese Journal of Applied Physics, 57 (11) 111001 doi:10.7567/jjap.57.111001
Wu, Chang-Hung, Juang, Zhen-Yu, Hsieh, Chien-Kuo (2014) Electron field emission characteristics of boron nanowires grown by ultralow pressure CVD. Japanese Journal of Applied Physics, 53 (11) 11 doi:10.7567/jjap.53.11re03
Makimoto, Toshiki, Horikoshi, Yoshiji (1990) p+-n+GaAs Tunnel Junction Diodes Grown by Flow-Rate Modulation Epitaxy. Japanese Journal of Applied Physics, 29. doi:10.1143/jjap.29.l2250
Hiroki, Masanobu, Kobayashi, Naoki (2003) Flat Surfaces and Interfaces in AlN/GaN Heterostructures and Superlattices Grown by Flow-Rate Modulation Epitaxy. Japanese Journal of Applied Physics, 42. 2305-2308 doi:10.1143/jjap.42.2305
 
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