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Van Hai, Le, Takahashi, Mitsue, Zhang, Wei, Sakai, Shigeki (2015) 100-nm-size ferroelectric-gate field-effect transistor with 108-cycle endurance. Japanese Journal of Applied Physics, 54 (8) 88004 doi:10.7567/jjap.54.088004

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Reference TypeJournal (article/letter/editorial)
Title100-nm-size ferroelectric-gate field-effect transistor with 108-cycle endurance
JournalJapanese Journal of Applied Physics
AuthorsVan Hai, LeAuthor
Takahashi, MitsueAuthor
Zhang, WeiAuthor
Sakai, ShigekiAuthor
Year2015 (August 1)Volume54
Issue8
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjap.54.088004Search in ResearchGate
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Mindat Ref. ID15045276Long-form Identifiermindat:1:5:15045276:0
GUID0
Full ReferenceVan Hai, Le, Takahashi, Mitsue, Zhang, Wei, Sakai, Shigeki (2015) 100-nm-size ferroelectric-gate field-effect transistor with 108-cycle endurance. Japanese Journal of Applied Physics, 54 (8) 88004 doi:10.7567/jjap.54.088004
Plain TextVan Hai, Le, Takahashi, Mitsue, Zhang, Wei, Sakai, Shigeki (2015) 100-nm-size ferroelectric-gate field-effect transistor with 108-cycle endurance. Japanese Journal of Applied Physics, 54 (8) 88004 doi:10.7567/jjap.54.088004
In(2015, August) Japanese Journal of Applied Physics Vol. 54 (8) Japan Society of Applied Physics

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