Yoshida, Shotaro, Ikeyama, Kazuki, Yasuda, Toshiki, Furuta, Takashi, Takeuchi, Tetsuya, Iwaya, Motoaki, Kamiyama, Satoshi, Akasaki, Isamu (2016) Electron and hole accumulations at GaN/AlInN/GaN interfaces and conductive n-type AlInN/GaN distributed Bragg reflectors. Japanese Journal of Applied Physics, 55 (5) 5 doi:10.7567/jjap.55.05fd10
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Electron and hole accumulations at GaN/AlInN/GaN interfaces and conductive n-type AlInN/GaN distributed Bragg reflectors | ||
| Journal | Japanese Journal of Applied Physics | ||
| Authors | Yoshida, Shotaro | Author | |
| Ikeyama, Kazuki | Author | ||
| Yasuda, Toshiki | Author | ||
| Furuta, Takashi | Author | ||
| Takeuchi, Tetsuya | Author | ||
| Iwaya, Motoaki | Author | ||
| Kamiyama, Satoshi | Author | ||
| Akasaki, Isamu | Author | ||
| Year | 2016 (May 1) | Volume | 55 |
| Issue | 5 | ||
| Publisher | Japan Society of Applied Physics | ||
| DOI | doi:10.7567/jjap.55.05fd10Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 15046340 | Long-form Identifier | mindat:1:5:15046340:7 |
| GUID | 0 | ||
| Full Reference | Yoshida, Shotaro, Ikeyama, Kazuki, Yasuda, Toshiki, Furuta, Takashi, Takeuchi, Tetsuya, Iwaya, Motoaki, Kamiyama, Satoshi, Akasaki, Isamu (2016) Electron and hole accumulations at GaN/AlInN/GaN interfaces and conductive n-type AlInN/GaN distributed Bragg reflectors. Japanese Journal of Applied Physics, 55 (5) 5 doi:10.7567/jjap.55.05fd10 | ||
| Plain Text | Yoshida, Shotaro, Ikeyama, Kazuki, Yasuda, Toshiki, Furuta, Takashi, Takeuchi, Tetsuya, Iwaya, Motoaki, Kamiyama, Satoshi, Akasaki, Isamu (2016) Electron and hole accumulations at GaN/AlInN/GaN interfaces and conductive n-type AlInN/GaN distributed Bragg reflectors. Japanese Journal of Applied Physics, 55 (5) 5 doi:10.7567/jjap.55.05fd10 | ||
| In | (2016, May) Japanese Journal of Applied Physics Vol. 55 (5) Japan Society of Applied Physics | ||
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