Horikiri, Fumimasa, Narita, Yoshinobu, Yoshida, Takehiro, Kitamura, Toshio, Ohta, Hiroshi, Nakamura, Tohru, Mishima, Tomoyoshi (2017) Wafer-level nondestructive inspection of substrate off-angle and net donor concentration of the n−-drift layer in vertical GaN-on-GaN Schottky diodes. Japanese Journal of Applied Physics, 56 (6) 61001 doi:10.7567/jjap.56.061001
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Wafer-level nondestructive inspection of substrate off-angle and net donor concentration of the n−-drift layer in vertical GaN-on-GaN Schottky diodes | ||
| Journal | Japanese Journal of Applied Physics | ||
| Authors | Horikiri, Fumimasa | Author | |
| Narita, Yoshinobu | Author | ||
| Yoshida, Takehiro | Author | ||
| Kitamura, Toshio | Author | ||
| Ohta, Hiroshi | Author | ||
| Nakamura, Tohru | Author | ||
| Mishima, Tomoyoshi | Author | ||
| Year | 2017 (June 1) | Volume | 56 |
| Issue | 6 | ||
| Publisher | Japan Society of Applied Physics | ||
| DOI | doi:10.7567/jjap.56.061001Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 15047650 | Long-form Identifier | mindat:1:5:15047650:6 |
| GUID | 0 | ||
| Full Reference | Horikiri, Fumimasa, Narita, Yoshinobu, Yoshida, Takehiro, Kitamura, Toshio, Ohta, Hiroshi, Nakamura, Tohru, Mishima, Tomoyoshi (2017) Wafer-level nondestructive inspection of substrate off-angle and net donor concentration of the n−-drift layer in vertical GaN-on-GaN Schottky diodes. Japanese Journal of Applied Physics, 56 (6) 61001 doi:10.7567/jjap.56.061001 | ||
| Plain Text | Horikiri, Fumimasa, Narita, Yoshinobu, Yoshida, Takehiro, Kitamura, Toshio, Ohta, Hiroshi, Nakamura, Tohru, Mishima, Tomoyoshi (2017) Wafer-level nondestructive inspection of substrate off-angle and net donor concentration of the n−-drift layer in vertical GaN-on-GaN Schottky diodes. Japanese Journal of Applied Physics, 56 (6) 61001 doi:10.7567/jjap.56.061001 | ||
| In | (2017, June) Japanese Journal of Applied Physics Vol. 56 (6) Japan Society of Applied Physics | ||
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