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Truyen, Nguyen Xuan, Taoka, Noriyuki, Ohta, Akio, Makihara, Katsunori, Yamada, Hisashi, Takahashi, Tokio, Ikeda, Mitsuhisa, Shimizu, Mitsuaki, Miyazaki, Seiichi (2018) High thermal stability of abrupt SiO2/GaN interface with low interface state density. Japanese Journal of Applied Physics, 57 (4) 4 doi:10.7567/jjap.57.04fg11

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Reference TypeJournal (article/letter/editorial)
TitleHigh thermal stability of abrupt SiO2/GaN interface with low interface state density
JournalJapanese Journal of Applied Physics
AuthorsTruyen, Nguyen XuanAuthor
Taoka, NoriyukiAuthor
Ohta, AkioAuthor
Makihara, KatsunoriAuthor
Yamada, HisashiAuthor
Takahashi, TokioAuthor
Ikeda, MitsuhisaAuthor
Shimizu, MitsuakiAuthor
Miyazaki, SeiichiAuthor
Year2018 (April 1)Volume57
Issue4
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjap.57.04fg11Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15048829Long-form Identifiermindat:1:5:15048829:5
GUID0
Full ReferenceTruyen, Nguyen Xuan, Taoka, Noriyuki, Ohta, Akio, Makihara, Katsunori, Yamada, Hisashi, Takahashi, Tokio, Ikeda, Mitsuhisa, Shimizu, Mitsuaki, Miyazaki, Seiichi (2018) High thermal stability of abrupt SiO2/GaN interface with low interface state density. Japanese Journal of Applied Physics, 57 (4) 4 doi:10.7567/jjap.57.04fg11
Plain TextTruyen, Nguyen Xuan, Taoka, Noriyuki, Ohta, Akio, Makihara, Katsunori, Yamada, Hisashi, Takahashi, Tokio, Ikeda, Mitsuhisa, Shimizu, Mitsuaki, Miyazaki, Seiichi (2018) High thermal stability of abrupt SiO2/GaN interface with low interface state density. Japanese Journal of Applied Physics, 57 (4) 4 doi:10.7567/jjap.57.04fg11
In(2018, April) Japanese Journal of Applied Physics Vol. 57 (4) Japan Society of Applied Physics

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