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Tokuda, Hirokuni, Suzuki, Kosuke, Asubar, Joel T., Kuzuhara, Masaaki (2018) Electron concentration in highly resistive GaN substrates co-doped with Si, C, and Fe. Japanese Journal of Applied Physics, 57 (7) 71001 doi:10.7567/jjap.57.071001

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Reference TypeJournal (article/letter/editorial)
TitleElectron concentration in highly resistive GaN substrates co-doped with Si, C, and Fe
JournalJapanese Journal of Applied Physics
AuthorsTokuda, HirokuniAuthor
Suzuki, KosukeAuthor
Asubar, Joel T.Author
Kuzuhara, MasaakiAuthor
Year2018 (July 1)Volume57
Issue7
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjap.57.071001Search in ResearchGate
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Mindat Ref. ID15049148Long-form Identifiermindat:1:5:15049148:6
GUID0
Full ReferenceTokuda, Hirokuni, Suzuki, Kosuke, Asubar, Joel T., Kuzuhara, Masaaki (2018) Electron concentration in highly resistive GaN substrates co-doped with Si, C, and Fe. Japanese Journal of Applied Physics, 57 (7) 71001 doi:10.7567/jjap.57.071001
Plain TextTokuda, Hirokuni, Suzuki, Kosuke, Asubar, Joel T., Kuzuhara, Masaaki (2018) Electron concentration in highly resistive GaN substrates co-doped with Si, C, and Fe. Japanese Journal of Applied Physics, 57 (7) 71001 doi:10.7567/jjap.57.071001
In(2018, July) Japanese Journal of Applied Physics Vol. 57 (7) Japan Society of Applied Physics

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Kuzuhara, Masaaki, Asubar, Joel T., Tokuda, Hirokuni (2016) AlGaN/GaN high-electron-mobility transistor technology for high-voltage and low-on-resistance operation. Japanese Journal of Applied Physics, 55 (7) 70101 doi:10.7567/jjap.55.070101
Asubar, Joel T., Yoshida, Satoshi, Tokuda, Hirokuni, Kuzuhara, Masaaki (2016) Highly reduced current collapse in AlGaN/GaN high-electron-mobility transistors by combined application of oxygen plasma treatment and field plate structures. Japanese Journal of Applied Physics, 55 (4) 4 doi:10.7567/jjap.55.04eg07
Tokuda, Hirokuni, Asubar, Joel T., Kuzuhara, Masaaki (2017) Analytical derivation of interface state density from sub-threshold swing in AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors. Japanese Journal of Applied Physics, 56 (10) 104101 doi:10.7567/jjap.56.104101
Tokuda, Hirokuni, Asubar, Joel T., Kuzuhara, Masaaki (2016) AlGaN/GaN metal–insulator–semiconductor high-electron mobility transistors with high on/off current ratio of over 5 × 1010achieved by ozone pretreatment and using ozone oxidant for Al2O3gate insulator. Japanese Journal of Applied Physics, 55 (12) 120305 doi:10.7567/jjap.55.120305
Tokuda, Hirokuni, Harada, Sayaka, Asubar, Joel T., Kuzuhara, Masaaki (2019) Influence of reactive-ion-etching depth on interface properties in Al2O3/n-GaN MOS diodes. Japanese Journal of Applied Physics, 58 (10) 106503 doi:10.7567/1347-4065/ab3d11
Tokuda, Hirokuni, Asubar, Joel T., Kuzuhara, Masaaki (2020) Design considerations for normally-off operation in Schottky gate p-GaN/AlGaN/GaN HEMTs. Japanese Journal of Applied Physics, 59 (8) 84002 doi:10.35848/1347-4065/aba329
Herbert, Kai C., Shibata, Kazuki, Asubar, Joel T., Kuzuhara, Masaaki (2021) Stoichiometric imbalances in Mg-implanted GaN. Japanese Journal of Applied Physics, 60 (6) 66504 doi:10.35848/1347-4065/ac0248
Oomae, Hiroto, Asubar, Joel T., Jinbo, Yoshio, Uchitomi, Naotaka (2011) Anomalous Hall Effect and Magnetoresistance in Mn-Doped ZnSnAs2Epitaxial Film on InP Substrates. Japanese Journal of Applied Physics, 50 (1) 1 doi:10.7567/jjap.50.01be12
Yamamoto, Akio, Makino, Shinya, Kanatani, Keito, Kuzuhara, Masaaki (2018) AlGaN/GaN heterostructures with an AlGaN layer grown directly on reactive-ion-etched GaN showing a high electron mobility (>1300 cm2V−1s−1) Japanese Journal of Applied Physics, 57 (4) 45502 doi:10.7567/jjap.57.045502
Tokuda, Hirokuni, Kojima, Toshikazu, Kuzuhara, Masaaki (2012) Role of Al and Ti for ohmic contact formation in AlGaN/GaN heterostructures. Applied Physics Letters, 101 (26). 262104pp. doi:10.1063/1.4773511
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