Ferlet-Cavrois, V., Paillet, P., Musseau, O., Leray, J.L., Faynot, O., Raynaud, C., Pelloie, J.L. (2000) Total dose behavior of partially depleted SOI dynamic threshold voltage MOS (DTMOS) for very low supply voltage applications (0.6-1 V) IEEE Transactions on Nuclear Science, 47 (3) 613-619 doi:10.1109/23.856488
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Total dose behavior of partially depleted SOI dynamic threshold voltage MOS (DTMOS) for very low supply voltage applications (0.6-1 V) | ||
| Journal | IEEE Transactions on Nuclear Science | ||
| Authors | Ferlet-Cavrois, V. | Author | |
| Paillet, P. | Author | ||
| Musseau, O. | Author | ||
| Leray, J.L. | Author | ||
| Faynot, O. | Author | ||
| Raynaud, C. | Author | ||
| Pelloie, J.L. | Author | ||
| Year | 2000 (June) | Volume | 47 |
| Issue | 3 | ||
| Publisher | Institute of Electrical and Electronics Engineers (IEEE) | ||
| DOI | doi:10.1109/23.856488Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 15577325 | Long-form Identifier | mindat:1:5:15577325:9 |
| GUID | 0 | ||
| Full Reference | Ferlet-Cavrois, V., Paillet, P., Musseau, O., Leray, J.L., Faynot, O., Raynaud, C., Pelloie, J.L. (2000) Total dose behavior of partially depleted SOI dynamic threshold voltage MOS (DTMOS) for very low supply voltage applications (0.6-1 V) IEEE Transactions on Nuclear Science, 47 (3) 613-619 doi:10.1109/23.856488 | ||
| Plain Text | Ferlet-Cavrois, V., Paillet, P., Musseau, O., Leray, J.L., Faynot, O., Raynaud, C., Pelloie, J.L. (2000) Total dose behavior of partially depleted SOI dynamic threshold voltage MOS (DTMOS) for very low supply voltage applications (0.6-1 V) IEEE Transactions on Nuclear Science, 47 (3) 613-619 doi:10.1109/23.856488 | ||
| In | (2000, June) IEEE Transactions on Nuclear Science Vol. 47 (3) Institute of Electrical and Electronics Engineers (IEEE) | ||
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