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Staišiūnas, Laurynas, Kalinauskas, Putinas, Juzeliūnas, Eimutis, Grigucevičienė, Asta, Leinartas, Konstantinas, Niaura, Gediminas, Stanionytė, Sandra, Selskis, Algirdas (2022) Silicon Passivation by Ultrathin Hafnium Oxide Layer for Photoelectrochemical Applications. Frontiers in Chemistry, 10. doi:10.3389/fchem.2022.859023

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Reference TypeJournal (article/letter/editorial)
TitleSilicon Passivation by Ultrathin Hafnium Oxide Layer for Photoelectrochemical Applications
JournalFrontiers in Chemistry
AuthorsStaišiūnas, LaurynasAuthor
Kalinauskas, PutinasAuthor
Juzeliūnas, EimutisAuthor
Grigucevičienė, AstaAuthor
Leinartas, KonstantinasAuthor
Niaura, GediminasAuthor
Stanionytė, SandraAuthor
Selskis, AlgirdasAuthor
Year2022 (March 25)Volume10
PublisherFrontiers Media SA
DOIdoi:10.3389/fchem.2022.859023Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15662023Long-form Identifiermindat:1:5:15662023:1
GUID0
Full ReferenceStaišiūnas, Laurynas, Kalinauskas, Putinas, Juzeliūnas, Eimutis, Grigucevičienė, Asta, Leinartas, Konstantinas, Niaura, Gediminas, Stanionytė, Sandra, Selskis, Algirdas (2022) Silicon Passivation by Ultrathin Hafnium Oxide Layer for Photoelectrochemical Applications. Frontiers in Chemistry, 10. doi:10.3389/fchem.2022.859023
Plain TextStaišiūnas, Laurynas, Kalinauskas, Putinas, Juzeliūnas, Eimutis, Grigucevičienė, Asta, Leinartas, Konstantinas, Niaura, Gediminas, Stanionytė, Sandra, Selskis, Algirdas (2022) Silicon Passivation by Ultrathin Hafnium Oxide Layer for Photoelectrochemical Applications. Frontiers in Chemistry, 10. doi:10.3389/fchem.2022.859023
In(2022) Frontiers in Chemistry Vol. 10. Frontiers Media SA

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