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Chen, Dongke, Jiang, Zhengyu, Tang, Ying, Zhou, Junlei, Gu, Yuzhou, He, Jing-Jing, Yuan, Jiaren (2022) Electrical and magnetic properties of antiferromagnetic semiconductor MnSi2N4 monolayer. Frontiers in Chemistry, 10. doi:10.3389/fchem.2022.1103704

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Reference TypeJournal (article/letter/editorial)
TitleElectrical and magnetic properties of antiferromagnetic semiconductor MnSi2N4 monolayer
JournalFrontiers in Chemistry
AuthorsChen, DongkeAuthor
Jiang, ZhengyuAuthor
Tang, YingAuthor
Zhou, JunleiAuthor
Gu, YuzhouAuthor
He, Jing-JingAuthor
Yuan, JiarenAuthor
Year2022 (December 8)Volume10
PublisherFrontiers Media SA
DOIdoi:10.3389/fchem.2022.1103704Search in ResearchGate
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Mindat Ref. ID15665025Long-form Identifiermindat:1:5:15665025:2
GUID0
Full ReferenceChen, Dongke, Jiang, Zhengyu, Tang, Ying, Zhou, Junlei, Gu, Yuzhou, He, Jing-Jing, Yuan, Jiaren (2022) Electrical and magnetic properties of antiferromagnetic semiconductor MnSi2N4 monolayer. Frontiers in Chemistry, 10. doi:10.3389/fchem.2022.1103704
Plain TextChen, Dongke, Jiang, Zhengyu, Tang, Ying, Zhou, Junlei, Gu, Yuzhou, He, Jing-Jing, Yuan, Jiaren (2022) Electrical and magnetic properties of antiferromagnetic semiconductor MnSi2N4 monolayer. Frontiers in Chemistry, 10. doi:10.3389/fchem.2022.1103704
In(2022) Frontiers in Chemistry Vol. 10. Frontiers Media SA

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