Vote for your favorite mineral in #MinCup25! - Kosmochlor vs. Azurite
It's a battle of green vs blue as rare but vibrant chromium-bearing kosmochlor up against the deep blue copper alteration mineral azurite.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Chen, Kai-Huang, Cheng, Chien-Min, Wang, Na-Fu, Zhou, Jia-Cheng, Chen, Mei-Li (2023) Bipolar Switching Properties of GdOx:SiO2 Thin Film Resistive Random Access Memory Using Co-Sputtering Technology. Crystals, 13 (2) 156 doi:10.3390/cryst13020156

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleBipolar Switching Properties of GdOx:SiO2 Thin Film Resistive Random Access Memory Using Co-Sputtering Technology
JournalCrystals
AuthorsChen, Kai-HuangAuthor
Cheng, Chien-MinAuthor
Wang, Na-FuAuthor
Zhou, Jia-ChengAuthor
Chen, Mei-LiAuthor
Year2023 (January 17)Volume13
Issue2
PublisherMDPI AG
DOIdoi:10.3390/cryst13020156Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15667636Long-form Identifiermindat:1:5:15667636:8
GUID0
Full ReferenceChen, Kai-Huang, Cheng, Chien-Min, Wang, Na-Fu, Zhou, Jia-Cheng, Chen, Mei-Li (2023) Bipolar Switching Properties of GdOx:SiO2 Thin Film Resistive Random Access Memory Using Co-Sputtering Technology. Crystals, 13 (2) 156 doi:10.3390/cryst13020156
Plain TextChen, Kai-Huang, Cheng, Chien-Min, Wang, Na-Fu, Zhou, Jia-Cheng, Chen, Mei-Li (2023) Bipolar Switching Properties of GdOx:SiO2 Thin Film Resistive Random Access Memory Using Co-Sputtering Technology. Crystals, 13 (2) 156 doi:10.3390/cryst13020156
In(2023, January) Crystals Vol. 13 (2) MDPI AG

See Also

These are possibly similar items as determined by title/reference text matching only.

Yang, Fann-Wei, Chen, Kai-Huang, Cheng, Chien-Min, Su, Feng-Yi (2013) Bipolar resistive switching properties in transparent vanadium oxide resistive random access memory. Ceramics International, 39. doi:10.1016/j.ceramint.2012.10.170
Chen, Kai-Huang, Cheng, Chien-Min, Chen, Ying-Jie, Chen, Mei-Li (2023) Lead-Free Piezoelectric Ceramic Micro-Pressure Thick Films. Crystals, 13 (2) 201 doi:10.3390/cryst13020201
Kuan, Min Chang, Yang, Fann Wei, Cheng, Chien Min, Chen, Kai Huang (2014) Fabrication and Switching Characterizations of Copper Oxide Thin Films for Applications in Resistive Random Access Memory Devices. Key Engineering Materials, 602. 1052-1055 doi:10.4028/www.scientific.net/kem.602-603.1052
Chen, Kai-Huang, Huang, Jen-Wei, Cheng, Chien-Min, Lin, Jian-Yang, Wu, Tzung-Shiun (2014) Nonvolatile transparent manganese oxide thin film resistance random access memory devices. Japanese Journal of Applied Physics, 53 (8) 8 doi:10.7567/jjap.53.08nl03
Kuan, Min Chang, Yang, Fann Wei, Cheng, Chien Min, Chen, Kai Huang, Lee, Jian Tz (2014) Bipolar Switching Properties of the Manganese Oxide Thin Film RRAM Devices. Key Engineering Materials, 602. 1056-1059 doi:10.4028/www.scientific.net/kem.602-603.1056
Chen, Kai-Huang, Kao, Ming-Cheng, Huang, Shou-Jen, Li, Cheng-Ying, Cheng, Chien-Min, Wu, Sean, Wu, Zong-Hsun (2017) Bipolar switching properties and electrical conduction mechanism of manganese oxide RRAM devices. Ceramics International, 43. doi:10.1016/j.ceramint.2017.05.183
Kuan, Ming Chang, Chen, Kai Huang, Tzou, Wen Cheng, Cheng, Chien Min, Lin, Yi Jun (2011) Low Temperature Method for Enhancing Ferroelectric Thin Films in Non-Volatile Random Access Memory Devices. Advanced Materials Research, 239. 2628-2631 doi:10.4028/www.scientific.net/amr.239-242.2628
Chen, Kai-Huang, Liao, Chin-Hsiung, Tsai, Jen-Hwan, Wu, Sean (2013) Electrical conduction and bipolar switching properties in transparent vanadium oxide resistive random access memory (RRAM) devices. Applied Physics A, 110. 211-216 doi:10.1007/s00339-012-7116-y
Chen, Kai-Huang, Chang, Chia-Hsiung, Cheng, Chien-Min, Yang, Cheng-Fu (2009) Large memory window in the vanadium doped Bi4Ti3O12 thin films. Applied Physics A, 97. 919-923 doi:10.1007/s00339-009-5361-5
Chu, Tian-Jian, Tsai, Tsung-Ming, Chang, Ting-Chang, Chang, Kuan-Chang, Pan, Chih-Hung, Chen, Kai-Huang, Chen, Jung-Hui, Chen, Hsin-Lu, Huang, Hui-Chun, Shih, Chih-Cheng, Syu, Yong-En, Zheng, Jin-Cheng, Sze, Simon M. (2014) Ultra-high resistive switching mechanism induced by oxygen ion accumulation on nitrogen-doped resistive random access memory. Applied Physics Letters, 105 (22). 223514pp. doi:10.1063/1.4902503
Lin, , Wu, , Chen, (2019) Effects of Sm2O3 and V2O5 Film Stacking on Switching Behaviors of Resistive Random Access Memories. Crystals, 9 (6) 318 doi:10.3390/cryst9060318
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are Β© OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 9, 2025 16:58:11
Go to top of page