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Tang, Zhuorui, Gu, Lin, Ma, Hongping, Dai, Kefeng, Luo, Qian, Zhang, Nan, Huang, Jiyu, Fan, Jiajie (2023) Study on the Surface Structure of N-Doped 4H-SiC Homoepitaxial Layer Dependence on the Growth Temperature and C/Si Ratio Deposited by CVD. Crystals, 13 (2) 193 doi:10.3390/cryst13020193

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Reference TypeJournal (article/letter/editorial)
TitleStudy on the Surface Structure of N-Doped 4H-SiC Homoepitaxial Layer Dependence on the Growth Temperature and C/Si Ratio Deposited by CVD
JournalCrystals
AuthorsTang, ZhuoruiAuthor
Gu, LinAuthor
Ma, HongpingAuthor
Dai, KefengAuthor
Luo, QianAuthor
Zhang, NanAuthor
Huang, JiyuAuthor
Fan, JiajieAuthor
Year2023 (January 21)Volume13
Issue2
PublisherMDPI AG
DOIdoi:10.3390/cryst13020193Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15676097Long-form Identifiermindat:1:5:15676097:5
GUID0
Full ReferenceTang, Zhuorui, Gu, Lin, Ma, Hongping, Dai, Kefeng, Luo, Qian, Zhang, Nan, Huang, Jiyu, Fan, Jiajie (2023) Study on the Surface Structure of N-Doped 4H-SiC Homoepitaxial Layer Dependence on the Growth Temperature and C/Si Ratio Deposited by CVD. Crystals, 13 (2) 193 doi:10.3390/cryst13020193
Plain TextTang, Zhuorui, Gu, Lin, Ma, Hongping, Dai, Kefeng, Luo, Qian, Zhang, Nan, Huang, Jiyu, Fan, Jiajie (2023) Study on the Surface Structure of N-Doped 4H-SiC Homoepitaxial Layer Dependence on the Growth Temperature and C/Si Ratio Deposited by CVD. Crystals, 13 (2) 193 doi:10.3390/cryst13020193
In(2023, January) Crystals Vol. 13 (2) MDPI AG

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