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Istlyaup, Assel, Duisenova, Ainur, Myasnikova, Lyudmila, Sergeyev, Daulet, Popov, Anatoli I. (2023) Simulation of a Single-Electron Device Based on Endohedral Fullerene (KI)@C180. Inorganics, 11 (2) 55 doi:10.3390/inorganics11020055

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Reference TypeJournal (article/letter/editorial)
TitleSimulation of a Single-Electron Device Based on Endohedral Fullerene (KI)@C180
JournalInorganics
AuthorsIstlyaup, AsselAuthor
Duisenova, AinurAuthor
Myasnikova, LyudmilaAuthor
Sergeyev, DauletAuthor
Popov, Anatoli I.Author
Year2023 (January 24)Volume11
Issue2
PublisherMDPI AG
DOIdoi:10.3390/inorganics11020055Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15693407Long-form Identifiermindat:1:5:15693407:9
GUID0
Full ReferenceIstlyaup, Assel, Duisenova, Ainur, Myasnikova, Lyudmila, Sergeyev, Daulet, Popov, Anatoli I. (2023) Simulation of a Single-Electron Device Based on Endohedral Fullerene (KI)@C180. Inorganics, 11 (2) 55 doi:10.3390/inorganics11020055
Plain TextIstlyaup, Assel, Duisenova, Ainur, Myasnikova, Lyudmila, Sergeyev, Daulet, Popov, Anatoli I. (2023) Simulation of a Single-Electron Device Based on Endohedral Fullerene (KI)@C180. Inorganics, 11 (2) 55 doi:10.3390/inorganics11020055
In(2023, January) Inorganics Vol. 11 (2) MDPI AG

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Duisenova, A G, Sergeyev, D M (2021) Model of a single-electron transistor based on endohedral fullerene (Sc3N)@C80. Journal of Physics: Conference Series, 2140 (1) 12006pp. doi:10.1088/1742-6596/2140/1/012006
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