Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Sattari-Esfahlan, Seyed Mehdi, Kim, Hyoung Gyun, Hyun, Sang Hwa, Choi, Jun-Hui, Hwang, Hyun Sik, Kim, Eui-Tae, Park, Hyeong Gi, Lee, Jae-Hyun (2023) Low-Temperature Direct Growth of Amorphous Boron Nitride Films for High-Performance Nanoelectronic Device Applications. ACS Applied Materials & Interfaces, 15 (5) 7274-7281 doi:10.1021/acsami.2c18706

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleLow-Temperature Direct Growth of Amorphous Boron Nitride Films for High-Performance Nanoelectronic Device Applications
JournalACS Applied Materials & Interfaces
AuthorsSattari-Esfahlan, Seyed MehdiAuthor
Kim, Hyoung GyunAuthor
Hyun, Sang HwaAuthor
Choi, Jun-HuiAuthor
Hwang, Hyun SikAuthor
Kim, Eui-TaeAuthor
Park, Hyeong GiAuthor
Lee, Jae-HyunAuthor
Year2023 (February 8)Volume15
Issue5
PublisherAmerican Chemical Society (ACS)
DOIdoi:10.1021/acsami.2c18706Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15694883Long-form Identifiermindat:1:5:15694883:0
GUID0
Full ReferenceSattari-Esfahlan, Seyed Mehdi, Kim, Hyoung Gyun, Hyun, Sang Hwa, Choi, Jun-Hui, Hwang, Hyun Sik, Kim, Eui-Tae, Park, Hyeong Gi, Lee, Jae-Hyun (2023) Low-Temperature Direct Growth of Amorphous Boron Nitride Films for High-Performance Nanoelectronic Device Applications. ACS Applied Materials & Interfaces, 15 (5) 7274-7281 doi:10.1021/acsami.2c18706
Plain TextSattari-Esfahlan, Seyed Mehdi, Kim, Hyoung Gyun, Hyun, Sang Hwa, Choi, Jun-Hui, Hwang, Hyun Sik, Kim, Eui-Tae, Park, Hyeong Gi, Lee, Jae-Hyun (2023) Low-Temperature Direct Growth of Amorphous Boron Nitride Films for High-Performance Nanoelectronic Device Applications. ACS Applied Materials & Interfaces, 15 (5) 7274-7281 doi:10.1021/acsami.2c18706
In(2023, February) ACS Applied Materials & Interfaces Vol. 15 (5) American Chemical Society (ACS)

See Also

These are possibly similar items as determined by title/reference text matching only.

Kim, Min Seong, Kim, Hyung Tae, Yoo, Hyukjoon, Choi, Dong Hyun, Park, Jeong Woo, Kim, Tae Sang, Lim, Jun Hyung, Kim, Hyun Jae (2021) Multifunctional Oxygen Scavenger Layer for High-Performance Oxide Thin-Film Transistors with Low-Temperature Processing. ACS Applied Materials & Interfaces, 13 (27) 31816-31824 doi:10.1021/acsami.1c05565
Hong, Min-Ki, Hyun, Sang-Hwa, Jang, Hyeon-Sik, An, Byeong-Seon, Jang, Ho-Chan, Hwang, Hyun-Sik, Kim, Seung-Il, Moon, Ji-Yun, Sattari-Esfahlan, Seyed Mehdi, Lee, Sang-Yeob, Son, Seok-Kyun, Whang, Dongmok, Lee, Jae-Hyun (2021) Controlled growth of in-plane graphene/h-BN heterostructure on a single crystal Ge substrate. Applied Surface Science, 554. 149655pp. doi:10.1016/j.apsusc.2021.149655
Kim, Won-Gi, Tak, Young Jun, Yoo, Hyukjoon, Kim, Hyung Tae, Park, Jeong Woo, Choi, Dong Hyun, Kim, Hyun Jae (2021) Photo-induced Reactive Oxygen Species Activation for Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors Using Sodium Hypochlorite. ACS Applied Materials & Interfaces, 13 (37) 44531-44540 doi:10.1021/acsami.1c10727
Yoo, Hyukjoon, Kim, Won-Gi, Kang, Byung Ha, Kim, Hyung Tae, Park, Jeong Woo, Choi, Dong Hyun, Kim, Tae Sang, Lim, Jun Hyung, Kim, Hyun Jae (2020) High Photosensitive Indium–Gallium–Zinc Oxide Thin-Film Phototransistor with a Selenium Capping Layer for Visible-Light Detection. ACS Applied Materials & Interfaces, 12. 10673-10680 doi:10.1021/acsami.9b22634
Song, Ah-Young, Kim, Hyori, Kim, Jung Min, Hwang, Sang-Hyun, Ko, Dae-Hyun, Kim, Hun Sik (2021) Bispecific Antibody Designed for Targeted NK Cell Activation and Functional Assessment for Biomedical Applications. ACS Applied Materials & Interfaces, 13 (36) 42370-42381 doi:10.1021/acsami.1c08986
Jeong, Hyun-Jun, Lee, Hyun-Mo, Ryu, Chung-Hyeon, Park, Eun-Jae, Han, Ki-Lim, Hwang, Hyun-Jun, Ok, Kyung-Chul, Kim, Hak-Sung, Park, Jin-Seong (2019) Ultra-High-Speed Intense Pulsed-Light Irradiation Technique for High-Performance Zinc Oxynitride Thin-Film Transistors. ACS Applied Materials & Interfaces, 11. 4152-4158 doi:10.1021/acsami.8b20291
Nahm, Ho-Hyun, Kim, Hyoung-Do, Park, Ji-Min, Kim, Hyun-Suk, Kim, Yong-Hyun (2020) Amorphous Mixture of Two Indium-Free BaSnO3 and ZnSnO3 for Thin-Film Transistors with Balanced Performance and Stability. ACS Applied Materials & Interfaces, 12. 3719-3726 doi:10.1021/acsami.9b17456
Park, Jeong Woo, Tak, Young Jun, Na, Jae Won, Lee, Heesoo, Kim, Won-Gi, Kim, Hyun Jae (2018) Effect of Static and Rotating Magnetic Fields on Low-Temperature Fabrication of InGaZnO Thin-Film Transistors. ACS Applied Materials & Interfaces, 10. 16613-16622 doi:10.1021/acsami.8b02433
Lee, Min-Kyu, Lee, Hyun, Kang, Min-Ho, Hwang, Changha, Kim, Hyoun-Ee, Oudega, Martin, Jang, Tae-Sik, Jung, Hyun-Do (2024) Bioinspired Nanotopography for Combinatory Osseointegration and Antibacterial Therapy. ACS Applied Materials & Interfaces, 16 (24) 30967-30979 doi:10.1021/acsami.4c06351
Kim, Seung-Il, Hyeong, Seok-Ki, Park, Dong Seop, Hyun, Sang-Hwa, Moon, Ji-Yun, Lee, Sangyeob, Kim, Tae-Sung, Lee, Seoung-Ki, Lee, Jae-Hyun, Heo, Keun (2021) Performance enhancement of amorphous WO3 assisted graphene-based electronic devices: Aspect of surface engineering. Applied Surface Science, 556. 149763pp. doi:10.1016/j.apsusc.2021.149763
Yi, Sum-Gyun, Park, Myung Uk, Kim, Sung Hyun, Lee, Chang Jun, Kwon, Junyoung, Lee, Gwan-Hyoung, Yoo, Kyung-Hwa (2018) Artificial Synaptic Emulators Based on MoS2 Flash Memory Devices with Double Floating Gates. ACS Applied Materials & Interfaces, 10. 31480-31487 doi:10.1021/acsami.8b10203
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: August 25, 2025 06:05:12
Go to top of page