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Song, Yiwen, Bhattacharyya, Arkka, Karim, Anwarul, Shoemaker, Daniel, Huang, Hsien-Lien, Roy, Saurav, McGray, Craig, Leach, Jacob H., Hwang, Jinwoo, Krishnamoorthy, Sriram, Choi, Sukwon (2023) Ultra-Wide Band Gap Ga2O3-on-SiC MOSFETs. ACS Applied Materials & Interfaces, 15 (5) 7137-7147 doi:10.1021/acsami.2c21048

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Reference TypeJournal (article/letter/editorial)
TitleUltra-Wide Band Gap Ga2O3-on-SiC MOSFETs
JournalACS Applied Materials & Interfaces
AuthorsSong, YiwenAuthor
Bhattacharyya, ArkkaAuthor
Karim, AnwarulAuthor
Shoemaker, DanielAuthor
Huang, Hsien-LienAuthor
Roy, SauravAuthor
McGray, CraigAuthor
Leach, Jacob H.Author
Hwang, JinwooAuthor
Krishnamoorthy, SriramAuthor
Choi, SukwonAuthor
Year2023 (February 8)Volume15
Issue5
PublisherAmerican Chemical Society (ACS)
DOIdoi:10.1021/acsami.2c21048Search in ResearchGate
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Mindat Ref. ID15694957Long-form Identifiermindat:1:5:15694957:8
GUID0
Full ReferenceSong, Yiwen, Bhattacharyya, Arkka, Karim, Anwarul, Shoemaker, Daniel, Huang, Hsien-Lien, Roy, Saurav, McGray, Craig, Leach, Jacob H., Hwang, Jinwoo, Krishnamoorthy, Sriram, Choi, Sukwon (2023) Ultra-Wide Band Gap Ga2O3-on-SiC MOSFETs. ACS Applied Materials & Interfaces, 15 (5) 7137-7147 doi:10.1021/acsami.2c21048
Plain TextSong, Yiwen, Bhattacharyya, Arkka, Karim, Anwarul, Shoemaker, Daniel, Huang, Hsien-Lien, Roy, Saurav, McGray, Craig, Leach, Jacob H., Hwang, Jinwoo, Krishnamoorthy, Sriram, Choi, Sukwon (2023) Ultra-Wide Band Gap Ga2O3-on-SiC MOSFETs. ACS Applied Materials & Interfaces, 15 (5) 7137-7147 doi:10.1021/acsami.2c21048
In(2023, February) ACS Applied Materials & Interfaces Vol. 15 (5) American Chemical Society (ACS)

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