Ni, Hao, Hu, Yonghong, Zhou, Guopeng, Mao, Caixia, Chen, Zhiyuan, He, Qingyong, Qian, Libing (2023) Structures, Electric Properties and STM Images of GeSe Monolayers Doped by Group IV–VI Atoms: A First-Principles Study. Crystals, 13 (2) 284 doi:10.3390/cryst13020284
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Structures, Electric Properties and STM Images of GeSe Monolayers Doped by Group IV–VI Atoms: A First-Principles Study | ||
| Journal | Crystals | ||
| Authors | Ni, Hao | Author | |
| Hu, Yonghong | Author | ||
| Zhou, Guopeng | Author | ||
| Mao, Caixia | Author | ||
| Chen, Zhiyuan | Author | ||
| He, Qingyong | Author | ||
| Qian, Libing | Author | ||
| Year | 2023 (February 7) | Volume | 13 |
| Issue | 2 | ||
| Publisher | MDPI AG | ||
| DOI | doi:10.3390/cryst13020284Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 15698922 | Long-form Identifier | mindat:1:5:15698922:2 |
| GUID | 0 | ||
| Full Reference | Ni, Hao, Hu, Yonghong, Zhou, Guopeng, Mao, Caixia, Chen, Zhiyuan, He, Qingyong, Qian, Libing (2023) Structures, Electric Properties and STM Images of GeSe Monolayers Doped by Group IV–VI Atoms: A First-Principles Study. Crystals, 13 (2) 284 doi:10.3390/cryst13020284 | ||
| Plain Text | Ni, Hao, Hu, Yonghong, Zhou, Guopeng, Mao, Caixia, Chen, Zhiyuan, He, Qingyong, Qian, Libing (2023) Structures, Electric Properties and STM Images of GeSe Monolayers Doped by Group IV–VI Atoms: A First-Principles Study. Crystals, 13 (2) 284 doi:10.3390/cryst13020284 | ||
| In | (2023, January) Crystals Vol. 13 (2) MDPI AG | ||
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