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Ying, Shih-Wei, Chao, Shou-Yen, Shih, Ming-Chang, Huang, Chien-Jung, Lan, Wen-How (2023) Thickness Study of Ga2O3 Barrier Layer in p-Si/n-MgZnO:Er/Ga2O3/ZnO:In Diode. Crystals, 13 (2) 275 doi:10.3390/cryst13020275

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Reference TypeJournal (article/letter/editorial)
TitleThickness Study of Ga2O3 Barrier Layer in p-Si/n-MgZnO:Er/Ga2O3/ZnO:In Diode
JournalCrystals
AuthorsYing, Shih-WeiAuthor
Chao, Shou-YenAuthor
Shih, Ming-ChangAuthor
Huang, Chien-JungAuthor
Lan, Wen-HowAuthor
Year2023 (February 5)Volume13
Issue2
PublisherMDPI AG
DOIdoi:10.3390/cryst13020275Search in ResearchGate
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Mindat Ref. ID15698929Long-form Identifiermindat:1:5:15698929:1
GUID0
Full ReferenceYing, Shih-Wei, Chao, Shou-Yen, Shih, Ming-Chang, Huang, Chien-Jung, Lan, Wen-How (2023) Thickness Study of Ga2O3 Barrier Layer in p-Si/n-MgZnO:Er/Ga2O3/ZnO:In Diode. Crystals, 13 (2) 275 doi:10.3390/cryst13020275
Plain TextYing, Shih-Wei, Chao, Shou-Yen, Shih, Ming-Chang, Huang, Chien-Jung, Lan, Wen-How (2023) Thickness Study of Ga2O3 Barrier Layer in p-Si/n-MgZnO:Er/Ga2O3/ZnO:In Diode. Crystals, 13 (2) 275 doi:10.3390/cryst13020275
In(2023, January) Crystals Vol. 13 (2) MDPI AG

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