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Ahmed Ali, Amal Mohamed, Ahmed, Naser M., Kabir, Norlaili A., Algadri, Natheer A., AL-Diabat, Ahmad M., Wadi, I. A., Alsadig, Ahmed, Aldaghri, Osamah A., Ibnaouf, Khalid H. (2023) Towards Extended Gate Field Effect Transistor-Based Radiation Sensors: Impact of Thicknesses and Radiation Doses on Al-Doped Zinc Oxide Sensitivity. Crystals, 13 (2) 314 doi:10.3390/cryst13020314

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Reference TypeJournal (article/letter/editorial)
TitleTowards Extended Gate Field Effect Transistor-Based Radiation Sensors: Impact of Thicknesses and Radiation Doses on Al-Doped Zinc Oxide Sensitivity
JournalCrystals
AuthorsAhmed Ali, Amal MohamedAuthor
Ahmed, Naser M.Author
Kabir, Norlaili A.Author
Algadri, Natheer A.Author
AL-Diabat, Ahmad M.Author
Wadi, I. A.Author
Alsadig, AhmedAuthor
Aldaghri, Osamah A.Author
Ibnaouf, Khalid H.Author
Year2023 (February 14)Volume13
Issue2
PublisherMDPI AG
DOIdoi:10.3390/cryst13020314Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15707068Long-form Identifiermindat:1:5:15707068:4
GUID0
Full ReferenceAhmed Ali, Amal Mohamed, Ahmed, Naser M., Kabir, Norlaili A., Algadri, Natheer A., AL-Diabat, Ahmad M., Wadi, I. A., Alsadig, Ahmed, Aldaghri, Osamah A., Ibnaouf, Khalid H. (2023) Towards Extended Gate Field Effect Transistor-Based Radiation Sensors: Impact of Thicknesses and Radiation Doses on Al-Doped Zinc Oxide Sensitivity. Crystals, 13 (2) 314 doi:10.3390/cryst13020314
Plain TextAhmed Ali, Amal Mohamed, Ahmed, Naser M., Kabir, Norlaili A., Algadri, Natheer A., AL-Diabat, Ahmad M., Wadi, I. A., Alsadig, Ahmed, Aldaghri, Osamah A., Ibnaouf, Khalid H. (2023) Towards Extended Gate Field Effect Transistor-Based Radiation Sensors: Impact of Thicknesses and Radiation Doses on Al-Doped Zinc Oxide Sensitivity. Crystals, 13 (2) 314 doi:10.3390/cryst13020314
In(2023, January) Crystals Vol. 13 (2) MDPI AG

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