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Vu, Tuan V., Anh, Nguyen P.Q., Phuc, Huynh V., Kartamyshev, A. I., Hieu, Nguyen N. (2023) Strong out-of-plane piezoelectricity and Rashba-type spin splitting in asymmetric structures: first-principles study for Janus γ-Sn2OX (X = S, Se, Te) monolayers. New Journal of Chemistry, 47 (24) 11660-11668 doi:10.1039/d3nj01788e

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Reference TypeJournal (article/letter/editorial)
TitleStrong out-of-plane piezoelectricity and Rashba-type spin splitting in asymmetric structures: first-principles study for Janus γ-Sn2OX (X = S, Se, Te) monolayers
JournalNew Journal of Chemistry
AuthorsVu, Tuan V.Author
Anh, Nguyen P.Q.Author
Phuc, Huynh V.Author
Kartamyshev, A. I.Author
Hieu, Nguyen N.Author
Year2023Volume47
Issue24
PublisherRoyal Society of Chemistry (RSC)
DOIdoi:10.1039/d3nj01788eSearch in ResearchGate
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Mindat Ref. ID15920979Long-form Identifiermindat:1:5:15920979:2
GUID0
Full ReferenceVu, Tuan V., Anh, Nguyen P.Q., Phuc, Huynh V., Kartamyshev, A. I., Hieu, Nguyen N. (2023) Strong out-of-plane piezoelectricity and Rashba-type spin splitting in asymmetric structures: first-principles study for Janus γ-Sn2OX (X = S, Se, Te) monolayers. New Journal of Chemistry, 47 (24) 11660-11668 doi:10.1039/d3nj01788e
Plain TextVu, Tuan V., Anh, Nguyen P.Q., Phuc, Huynh V., Kartamyshev, A. I., Hieu, Nguyen N. (2023) Strong out-of-plane piezoelectricity and Rashba-type spin splitting in asymmetric structures: first-principles study for Janus γ-Sn2OX (X = S, Se, Te) monolayers. New Journal of Chemistry, 47 (24) 11660-11668 doi:10.1039/d3nj01788e
In(2023) New Journal of Chemistry Vol. 47 (24) Royal Society of Chemistry (RSC)

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Vu, Tuan V., Phuc, Huynh V., Kartamyshev, A. I., Hieu, Nguyen N. (2023) Enhanced out-of-plane piezoelectricity and carrier mobility in Janus γ- Sn2XY ( X /Y= S, Se, Te) monolayers: A first-principles prediction. Applied Physics Letters, 122 (6) 61601 doi:10.1063/5.0135210
Vu, Tuan V., Phuc, Huynh V., Nguyen, Chuong V., Vi, Vo T. T., Kartamyshev, A. I., Hieu, Nguyen N. (2022) Rashba-type spin splitting and transport properties of novel Janus XWGeN2 (X = O, S, Se, Te) monolayers. Physical Chemistry Chemical Physics, 24 (27) 16512-16521 doi:10.1039/d2cp02015g
Vu, Tuan V.; Vi, Vo T.T.; Phuc, Huynh V.; Anh, Nguyen P.Q.; Kartamyshev, A.I.; Hieu, Nguyen N. (2025) Tunable Raman activity and enhanced piezoelectricity of AlGeZ2 (Z= N, P, and As) monolayers: A first-principles calculation. Ceramics International, 51 (14). doi:10.1016/j.ceramint.2025.02.131
Vu, Tuan V., Phuc, Huynh V., Ahmad, Sohail, Hoi, Bui D., Hieu, Nguyen V., Al-Qaisi, Samah, Kartamyshev, A. I., Hieu, Nguyen N. (2022) Theoretical prediction of Janus PdXO (X = S, Se, Te) monolayers: structural, electronic, and transport properties. RSC Advances, 12 (21) 12971-12977 doi:10.1039/d2ra01443b
Vu, Tuan V., Hieu, Nguyen N., Lavrentyev, A. A., Khyzhun, O. Y., Lanh, Chu V., Kartamyshev, A. I., Phuc, Huynh V., Hieu, Nguyen V. (2022) Novel Janus GaInX3 (X = S, Se, Te) single-layers: first-principles prediction on structural, electronic, and transport properties. RSC Advances, 12 (13) 7973-7979 doi:10.1039/d1ra09458k
Vu, Tuan V, Linh, Tran P T, Phuc, Huynh V, Duque, C A, Kartamyshev, A I, Hieu, Nguyen N (2022) Structural, electronic, and transport properties of Janus GaInX 2 (X = S, Se, Te) monolayers: first-principles study. Journal of Physics: Condensed Matter, 34 (4) 45501pp. doi:10.1088/1361-648x/ac316e
Vu, Tuan V., Hoi, Bui D., Kartamyshev, A. I., Hieu, Nguyen N. (2024) Induced out-of-plane piezoelectricity and giant Rashba spin splitting in Janus WSiZ3H (Z = N, P, As) monolayers toward next-generation electronic devices. Journal of Applied Physics, 135 (7) doi:10.1063/5.0190799
Vu, Tuan V, Phuc, Huynh V, Nhan, Le C, Kartamyshev, A I, Hieu, Nguyen N (2023) Predicted novel Janus γ-Ge2 XY ( X/Y=  S, Se, Te) monolayers with Mexican-hat dispersions and high carrier mobilities. Journal of Physics D: Applied Physics, 56 (13) 135302 doi:10.1088/1361-6463/acbe0a
Hiep, Nguyen T., Nha, Vo Q., Hieu, Le D., Hoi, Bui D., Anh, Nguyen P.Q., Phuc, Huynh V., Nguyen, Cuong Q., Hieu, Nguyen N. (2025) Novel Janus Co3GeXTe (X= S, Se) monolayers with high structural stability: First-principles predictions. Chemical Physics, 594. doi:10.1016/j.chemphys.2025.112660
Vu, Tuan V., Hoi, Bui D., Kartamyshev, A. I., Hieu, Nguyen N. (2024) Erratum: “Induced out-of-plane piezoelectricity and giant Rashba spin splitting in Janus WSiZ3H (Z = N, P, As) monolayers toward next-generation electronic devices” [J. Appl. Phys. 135, 074301 (2024)]. Journal of Applied Physics, 135 (10) doi:10.1063/5.0204141
Vu, Tuan V.; Hung, Le V.; Nguyen, Chuong V.; Hiep, Nguyen T.; Bui, Kieu-My; Kartamyshev, A. I.; Hieu, Nguyen N. (2025) Carrier mobility in Janus WBAs X2 (X= S, Se, Te) governed by electron–phonon scattering: A first-principles study. Applied Physics Letters, 127 (8). doi:10.1063/5.0289121
 
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