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Kim, Heung, Kim, Chong Hee (1984) The role of second-component gases on the nitriding rate of a silicon compact. Journal of Materials Science Letters, 3 (3) 201-202 doi:10.1007/bf00726792

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Reference TypeJournal (article/letter/editorial)
TitleThe role of second-component gases on the nitriding rate of a silicon compact
JournalJournal of Materials Science Letters
AuthorsKim, HeungAuthor
Kim, Chong HeeAuthor
Year1984 (March)Volume3
Issue3
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/bf00726792Search in ResearchGate
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Mindat Ref. ID16408837Long-form Identifiermindat:1:5:16408837:5
GUID0
Full ReferenceKim, Heung, Kim, Chong Hee (1984) The role of second-component gases on the nitriding rate of a silicon compact. Journal of Materials Science Letters, 3 (3) 201-202 doi:10.1007/bf00726792
Plain TextKim, Heung, Kim, Chong Hee (1984) The role of second-component gases on the nitriding rate of a silicon compact. Journal of Materials Science Letters, 3 (3) 201-202 doi:10.1007/bf00726792
In(1984, March) Journal of Materials Science Letters Vol. 3 (3) Springer Science and Business Media LLC

See Also

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Kim, Heung, Kim, Chong Hee (1984) The effects of second-component gases on the transport properties of silicon nitriding atmosphere. Journal of Materials Science Letters, 3 (3) 199-200 doi:10.1007/bf00726791
Kim, Heung, Kim, Chong Hee (1984) The effects of thermal diffusion of nitrogen gas on silicon nitridation rate. Journal of Materials Science Letters, 3 (3) 203-204 doi:10.1007/bf00726793
Kim, Heung, Kim, Chong Hee (1985) The influence of the various transport properties of the nitriding atmosphere on the formation of reaction-bonded Si3N4. Journal of Materials Science, 20. 149-156 doi:10.1007/bf00555907
Kim, Hueng, Kim, Chong Hee (1985) The influence of the various transport properties of the nitriding atmosphere on the formation of reaction-bonded Si3N4. Journal of Materials Science, 20. 141-148 doi:10.1007/bf00555906
Park, Ji Yeon, Kim, Chong Hee (1988) The ?- to ?-Si3N4 transformation in the presence of liquid silicon. Journal of Materials Science, 23. 3049-3054 doi:10.1007/bf00551272
Seog, In -Sig, Kim, Chong Hee (1993) Preparation of monodispersed spherical silicon carbide by the sol-gel method. Journal of Materials Science, 28. 3277-3282 doi:10.1007/bf00354247
Cheol Koh, Sang, Kim, Do-Hyeong, Kim, Chong Hee (1993) Effects of sedimentation treatment on the mechanical properties of SiC whisker-reinforced Si3N4 composites. Journal of Materials Science Letters, 12 (4) 237-238 doi:10.1007/bf00539810
Kim, Weon-Ju, Moon, Young Tae, Kim, Chong Hee, Kim, Do Kyung, Lee, Hae-Weon (1994) Coating of yttria precursor on AIN powder byin situ precipitation. Journal of Materials Science Letters, 13 (18) 1349-1351 doi:10.1007/bf00624492
Kim, Eun Dong, Oh, Myung Hwan, Kim, Chong Hee (1986) Effects of annealing on the grain boundary potential barrier of ZnO varistor. Journal of Materials Science, 21. 3491-3496 doi:10.1007/bf02402992
Kim, Sung Tae, Kim, Chong Hee (1992) Interfacial reaction product and its effect on the strength of copper to alumina eutectic bonding. Journal of Materials Science, 27. 2061-2066 doi:10.1007/bf01117918
Nam, In Joon, Do Kim, Kyeong, Kim, Chong Hee (1989) Contribution of subregular solution model to binary oxide system. Journal of Materials Science Letters, 8 (5) 603-604 doi:10.1007/bf00720313
 
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