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Dhanasekaran, P. Caleb, Gopalam, B. S. V. (1987) Influence of minority carrier diffusion length in determining the effects of base layer thickness of an n+p silicon solar cell and a BSF cell by numerical analysis. Journal of Materials Science Letters, 6 (10) 1156-1160 doi:10.1007/bf01729168

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Reference TypeJournal (article/letter/editorial)
TitleInfluence of minority carrier diffusion length in determining the effects of base layer thickness of an n+p silicon solar cell and a BSF cell by numerical analysis
JournalJournal of Materials Science Letters
AuthorsDhanasekaran, P. CalebAuthor
Gopalam, B. S. V.Author
Year1987 (October)Volume6
Issue10
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/bf01729168Search in ResearchGate
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Mindat Ref. ID16410068Long-form Identifiermindat:1:5:16410068:8
GUID0
Full ReferenceDhanasekaran, P. Caleb, Gopalam, B. S. V. (1987) Influence of minority carrier diffusion length in determining the effects of base layer thickness of an n+p silicon solar cell and a BSF cell by numerical analysis. Journal of Materials Science Letters, 6 (10) 1156-1160 doi:10.1007/bf01729168
Plain TextDhanasekaran, P. Caleb, Gopalam, B. S. V. (1987) Influence of minority carrier diffusion length in determining the effects of base layer thickness of an n+p silicon solar cell and a BSF cell by numerical analysis. Journal of Materials Science Letters, 6 (10) 1156-1160 doi:10.1007/bf01729168
In(1987, October) Journal of Materials Science Letters Vol. 6 (10) Springer Science and Business Media LLC

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Caleb Dhanasekaran, P., Murali, K. R., Gopalam, B. S. V. (1989) Au/P polysilicon Schottky diodes. Journal of Materials Science, 24. 1719-1724 doi:10.1007/bf01105696
Dhanasekaran, P. C., Vaya, P. R., Gopalam, B. S. V. (1984) Spectral sensitivity calculations on n+–p and n+–p–p+ silicon solar cells. physica status solidi (a), 83 (2). 693-700 doi:10.1002/pssa.2210830236
Cattarin, Sandro, Peter, Laurence M. (1997) Determination of Minority Carrier Diffusion Length in Silicon Wafers by a Dual Electrolyte Cell. The Journal of Physical Chemistry B, 101 (20). 3961-3967 doi:10.1021/jp9639206
Daud, T., Koliwad, K. M., Allen, F. G. (1978) Effect of grain boundaries in silicon on minority‐carrier diffusion length and solar‐cell efficiency. Applied Physics Letters, 33 (12). 1009-1011 doi:10.1063/1.90250
Swimm, Randall T., Dumas, Katherine A. (1982) Optical absorption coefficient and minority carrier diffusion length measurements in low‐cost silicon solar cell material. Journal of Applied Physics, 53 (11). 7502-7504 doi:10.1063/1.330158
Kapoor, A, Kothari, L S (1987) The effect of temperature, illumination level and dopant concentrations on the minority-carrier lifetime in an n-p homojunction solar cell. Journal of Physics D: Applied Physics, 20. 1652-1656 doi:10.1088/0022-3727/20/12/017
Sharma, S. K., Singh, S. N., Chakravarty, B. C., Das, B. K. (1986) Determination of minority‐carrier diffusion length in ap‐silicon wafer by photocurrent generation method. Journal of Applied Physics, 60 (10). 3550-3552 doi:10.1063/1.337610
Thamri, S., Raouadi, M.H. (2024) Enhancement of NiO/Si solar cell by adding porous silicon and a silicon dioxide SiO2 carrier selective layer. Materials Letters, 360. 136002 doi:10.1016/j.matlet.2024.136002
Murali, K. R., Gopalam, B. S. V. (1987) Electrical conduction in zinc phosphide. Journal of Materials Science Letters, 6 (2) 209-210 doi:10.1007/bf01728988
Dimitriadis, C. A., Papadimitriou, L., Economou, N. A. (1983) Resistivity dependence of the minority carrier diffusion length in in single crystals of Cu2O. Journal of Materials Science Letters, 2 (11) 691-693 doi:10.1007/bf00720404
Sam, R, Zouma, B, Zougmoré, F, Koalaga, Z, Zoungrana, M, Zerbo, I (2012) 3D determination of the minority carrier lifetime and the p-n junction recombination velocity of a polycrystalline silicon solar cell. IOP Conference Series: Materials Science and Engineering, 29. 12018pp. doi:10.1088/1757-899x/29/1/012018
 
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