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Choi, Byung Jin, Park, Dong Won, Kim, Dai Ryong (1995) Preparation of hexagonal boron nitride by low pressure chemical vapour deposition in the BBr3 + NH3 + H2 system. Journal of Materials Science Letters, 14 (6) 452-454 doi:10.1007/bf00274570

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Reference TypeJournal (article/letter/editorial)
TitlePreparation of hexagonal boron nitride by low pressure chemical vapour deposition in the BBr3 + NH3 + H2 system
JournalJournal of Materials Science Letters
AuthorsChoi, Byung JinAuthor
Park, Dong WonAuthor
Kim, Dai RyongAuthor
Year1995 (January)Volume14
Issue6
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/bf00274570Search in ResearchGate
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Mindat Ref. ID16415057Long-form Identifiermindat:1:5:16415057:7
GUID0
Full ReferenceChoi, Byung Jin, Park, Dong Won, Kim, Dai Ryong (1995) Preparation of hexagonal boron nitride by low pressure chemical vapour deposition in the BBr3 + NH3 + H2 system. Journal of Materials Science Letters, 14 (6) 452-454 doi:10.1007/bf00274570
Plain TextChoi, Byung Jin, Park, Dong Won, Kim, Dai Ryong (1995) Preparation of hexagonal boron nitride by low pressure chemical vapour deposition in the BBr3 + NH3 + H2 system. Journal of Materials Science Letters, 14 (6) 452-454 doi:10.1007/bf00274570
In(1995, January) Journal of Materials Science Letters Vol. 14 (6) Springer Science and Business Media LLC

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