Reference Type | Journal (article/letter/editorial) |
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Title | United Gauss–Pearson-IV distribution model of ions implanted into silicon☆ |
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Journal | Solid State Ionics |
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Authors | Zhang, Haipeng | Author |
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Gao, Mingyu | Author |
Xu, Liyan | Author |
Lin, Mi | Author |
Niu, Xiaoyan | Author |
Lv, Weifeng | Author |
Year | 2008 (September 15) | Volume | 179 |
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Issue | 21 |
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Publisher | Elsevier BV |
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DOI | doi:10.1016/j.ssi.2008.01.084Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 16820630 | Long-form Identifier | mindat:1:5:16820630:0 |
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GUID | 0 |
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Full Reference | Zhang, Haipeng, Gao, Mingyu, Xu, Liyan, Lin, Mi, Niu, Xiaoyan, Lv, Weifeng (2008) United Gauss–Pearson-IV distribution model of ions implanted into silicon☆. Solid State Ionics, 179 (21) 832-836 doi:10.1016/j.ssi.2008.01.084 |
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Plain Text | Zhang, Haipeng, Gao, Mingyu, Xu, Liyan, Lin, Mi, Niu, Xiaoyan, Lv, Weifeng (2008) United Gauss–Pearson-IV distribution model of ions implanted into silicon☆. Solid State Ionics, 179 (21) 832-836 doi:10.1016/j.ssi.2008.01.084 |
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In | (2008, September) Solid State Ionics Vol. 179 (21) Elsevier BV |
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