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Wojdak, M., Jayatilleka, H., Shah, M., Kenyon, A.J., Gourbilleau, F., Rizk, R. (2013) Modification of erbium photoluminescence decay rate due to ITO layers on thin films of SiO2:Er doped with Si-nanoclusters. Journal of Luminescence, 136. 407-410 doi:10.1016/j.jlumin.2012.11.042

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Reference TypeJournal (article/letter/editorial)
TitleModification of erbium photoluminescence decay rate due to ITO layers on thin films of SiO2:Er doped with Si-nanoclusters
JournalJournal of Luminescence
AuthorsWojdak, M.Author
Jayatilleka, H.Author
Shah, M.Author
Kenyon, A.J.Author
Gourbilleau, F.Author
Rizk, R.Author
Year2013 (April)Volume136
PublisherElsevier BV
DOIdoi:10.1016/j.jlumin.2012.11.042Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID16842111Long-form Identifiermindat:1:5:16842111:6
GUID0
Full ReferenceWojdak, M., Jayatilleka, H., Shah, M., Kenyon, A.J., Gourbilleau, F., Rizk, R. (2013) Modification of erbium photoluminescence decay rate due to ITO layers on thin films of SiO2:Er doped with Si-nanoclusters. Journal of Luminescence, 136. 407-410 doi:10.1016/j.jlumin.2012.11.042
Plain TextWojdak, M., Jayatilleka, H., Shah, M., Kenyon, A.J., Gourbilleau, F., Rizk, R. (2013) Modification of erbium photoluminescence decay rate due to ITO layers on thin films of SiO2:Er doped with Si-nanoclusters. Journal of Luminescence, 136. 407-410 doi:10.1016/j.jlumin.2012.11.042
In(2013) Journal of Luminescence Vol. 136. Elsevier BV

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