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Nguyen, Thi-Hoai-Thu, Chen, Jyh-Chen (2024) Numerical study of continuous Czochralski (CCz) silicon single crystal growth in a double-side heater. Journal of Crystal Growth, 626. 127488 doi:10.1016/j.jcrysgro.2023.127488

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Reference TypeJournal (article/letter/editorial)
TitleNumerical study of continuous Czochralski (CCz) silicon single crystal growth in a double-side heater
JournalJournal of Crystal Growth
AuthorsNguyen, Thi-Hoai-ThuAuthor
Chen, Jyh-ChenAuthor
Year2024 (January)Volume626
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2023.127488Search in ResearchGate
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Mindat Ref. ID16948270Long-form Identifiermindat:1:5:16948270:3
GUID0
Full ReferenceNguyen, Thi-Hoai-Thu, Chen, Jyh-Chen (2024) Numerical study of continuous Czochralski (CCz) silicon single crystal growth in a double-side heater. Journal of Crystal Growth, 626. 127488 doi:10.1016/j.jcrysgro.2023.127488
Plain TextNguyen, Thi-Hoai-Thu, Chen, Jyh-Chen (2024) Numerical study of continuous Czochralski (CCz) silicon single crystal growth in a double-side heater. Journal of Crystal Growth, 626. 127488 doi:10.1016/j.jcrysgro.2023.127488
In(2024) Journal of Crystal Growth Vol. 626. Elsevier BV

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