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Kajan, Juraj, Volkov, Mikhail, Damazyan, Grigori, Mukhin, Ivan, Gregor, Tomáš, Palashov, Oleg (2020) Fabrication and Characterization of High‐Dimension Single‐Crystal Yb:YAG Ingots Grown by Horizontal Directed Crystallization Method. Crystal Research and Technology, 55 (12) doi:10.1002/crat.202000105

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Reference TypeJournal (article/letter/editorial)
TitleFabrication and Characterization of High‐Dimension Single‐Crystal Yb:YAG Ingots Grown by Horizontal Directed Crystallization Method
JournalCrystal Research and Technology
AuthorsKajan, JurajAuthor
Volkov, MikhailAuthor
Damazyan, GrigoriAuthor
Mukhin, IvanAuthor
Gregor, TomášAuthor
Palashov, OlegAuthor
Year2020 (December)Volume55
Issue12
PublisherWiley
DOIdoi:10.1002/crat.202000105Search in ResearchGate
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Mindat Ref. ID16984845Long-form Identifiermindat:1:5:16984845:5
GUID0
Full ReferenceKajan, Juraj, Volkov, Mikhail, Damazyan, Grigori, Mukhin, Ivan, Gregor, Tomáš, Palashov, Oleg (2020) Fabrication and Characterization of High‐Dimension Single‐Crystal Yb:YAG Ingots Grown by Horizontal Directed Crystallization Method. Crystal Research and Technology, 55 (12) doi:10.1002/crat.202000105
Plain TextKajan, Juraj, Volkov, Mikhail, Damazyan, Grigori, Mukhin, Ivan, Gregor, Tomáš, Palashov, Oleg (2020) Fabrication and Characterization of High‐Dimension Single‐Crystal Yb:YAG Ingots Grown by Horizontal Directed Crystallization Method. Crystal Research and Technology, 55 (12) doi:10.1002/crat.202000105
In(2020, December) Crystal Research & Technology Vol. 55 (12)

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(2020) Horizontal Directed Crystallization: Fabrication and Characterization of High‐Dimension Single‐Crystal Yb:YAG Ingots Grown by Horizontal Directed Crystallization Method (Crystal Research and Technology 12/2020) Crystal Research and Technology, 55 (12) doi:10.1002/crat.202070033
Kajan, Juraj, Damazyan, Grigori, Tinkova, Vira, Prnová, Anna, Michálková, Monika, Švančárek, Peter, Gregor, Tomáš, Akusevich, Alena, Hruška, Branislav, Galusek, Dušan (2024) A Feature of the Horizontal Directional Solidification (HDS) Method Affects the Microstructure of Al2O3/YAG Eutectic Ceramics. Crystals, 14 (10). doi:10.3390/cryst14100858
Kuznetsov, Ivan, Mukhin, Ivan, Vadimova, Olga, Palashov, Oleg, Ueda, Ken-Ichi (2015) Thermal effects in Yb:YAG single-crystal thin-rod amplifier. Applied Optics, 54. 7747pp. doi:10.1364/ao.54.007747
(2020) Masthead: Crystal Research and Technology 12'2020. Crystal Research and Technology, 55 (12) doi:10.1002/crat.202070034
Nizhankovskyi, S. V., Tan'ko, A. V., Sidelnikova, N. S., Adonkin, G. T. (2015) Formation of longitudinal aggregation of inclusions in bulk sapphire and yttrium‐aluminum garnet grown by horizontal directed crystallization method. Crystal Research and Technology, 50 (3) 223-229 doi:10.1002/crat.201400430
Perevezentsev, Evgeny A., Kuznetsov, Ivan I., Mukhin, Ivan B., Volkov, Mikhail R., Palashov, Oleg V. (2019) Multipass cryogenic Yb:Y2O3 ceramic disk amplifier. Applied Physics B, 125 (8). doi:10.1007/s00340-019-7254-4
(2019) Seed Size: Influence of Seed Size on the Quality of High‐Performance Multicrystalline Silicon Ingots Grown by Fused Quartz Particle Seeding (Crystal Research and Technology 3/2019) Crystal Research and Technology, 54 (3) doi:10.1002/crat.201970014
Prabukanthan, P., Dhanasekaran, R. (2008) Stoichiometric single crystal growth of AgGaS2 by iodine transport method and characterization. Crystal Research and Technology, 43 (12) 1292-1296 doi:10.1002/crat.200800055
Bader, Kristian, Gille, Peter (2020) Single Crystal Growth of FeGa3 and FeGa3−xGex from High‐Temperature Solution Using the Czochralski Method. Crystal Research and Technology, 55 (2) doi:10.1002/crat.201900067
Galenin, Evgeny, Baumer, Vyacheslav, Gerasymov, Iaroslav, Tkachenko, Sergii, Sidletskiy, Oleg (2015) Characterization of bismuth germanate crystals grown by EFG method. Crystal Research and Technology, 50 (2) 150-154 doi:10.1002/crat.201400237
Song, Gengxin, Li, Liang, Xu, Dapeng (2010) High‐quality LaCoO3 single crystal grown by optical floating zone method and its electromagnetic properties. Crystal Research and Technology, 45 (5) 461-464 doi:10.1002/crat.201000054
 
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