Shirotani, Ichimin (1997) High Pressure and Development of New Materials. Electrical Properties of Semiconductors and Superconductors Prepared at High Pressure. THE REVIEW OF HIGH PRESSURE SCIENCE AND TECHNOLOGY, 6 (2) 109-114 doi:10.4131/jshpreview.6.109
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | High Pressure and Development of New Materials. Electrical Properties of Semiconductors and Superconductors Prepared at High Pressure. | ||
Journal | THE REVIEW OF HIGH PRESSURE SCIENCE AND TECHNOLOGY | ||
Authors | Shirotani, Ichimin | Author | |
Year | 1997 | Volume | 6 |
Issue | 2 | ||
Publisher | The Japan Society of High Pressure Science and Technology | ||
DOI | doi:10.4131/jshpreview.6.109Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 16993019 | Long-form Identifier | mindat:1:5:16993019:8 |
GUID | 0 | ||
Full Reference | Shirotani, Ichimin (1997) High Pressure and Development of New Materials. Electrical Properties of Semiconductors and Superconductors Prepared at High Pressure. THE REVIEW OF HIGH PRESSURE SCIENCE AND TECHNOLOGY, 6 (2) 109-114 doi:10.4131/jshpreview.6.109 | ||
Plain Text | Shirotani, Ichimin (1997) High Pressure and Development of New Materials. Electrical Properties of Semiconductors and Superconductors Prepared at High Pressure. THE REVIEW OF HIGH PRESSURE SCIENCE AND TECHNOLOGY, 6 (2) 109-114 doi:10.4131/jshpreview.6.109 | ||
In | (1997) THE REVIEW OF HIGH PRESSURE SCIENCE AND TECHNOLOGY Vol. 6 (2) The Japan Society of High Pressure Science and Technology |
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