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Eichfeld, Sarah M., Shen, Haoting, Eichfeld, Chad M., Mohney, Suzanne E., Dickey, Elizabeth C., Redwing, Joan M. (2011) Gas phase equilibrium limitations on the vapor–liquid–solid growth of epitaxial silicon nanowires using SiCl4. Journal of Materials Research, 26 (17) 2207-2214 doi:10.1557/jmr.2011.144

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Reference TypeJournal (article/letter/editorial)
TitleGas phase equilibrium limitations on the vapor–liquid–solid growth of epitaxial silicon nanowires using SiCl4
JournalJournal of Materials Research
AuthorsEichfeld, Sarah M.Author
Shen, HaotingAuthor
Eichfeld, Chad M.Author
Mohney, Suzanne E.Author
Dickey, Elizabeth C.Author
Redwing, Joan M.Author
Year2011 (September 14)Volume26
Issue17
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1557/jmr.2011.144Search in ResearchGate
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Mindat Ref. ID17102616Long-form Identifiermindat:1:5:17102616:2
GUID0
Full ReferenceEichfeld, Sarah M., Shen, Haoting, Eichfeld, Chad M., Mohney, Suzanne E., Dickey, Elizabeth C., Redwing, Joan M. (2011) Gas phase equilibrium limitations on the vapor–liquid–solid growth of epitaxial silicon nanowires using SiCl4. Journal of Materials Research, 26 (17) 2207-2214 doi:10.1557/jmr.2011.144
Plain TextEichfeld, Sarah M., Shen, Haoting, Eichfeld, Chad M., Mohney, Suzanne E., Dickey, Elizabeth C., Redwing, Joan M. (2011) Gas phase equilibrium limitations on the vapor–liquid–solid growth of epitaxial silicon nanowires using SiCl4. Journal of Materials Research, 26 (17) 2207-2214 doi:10.1557/jmr.2011.144
In(2011, September) Journal of Materials Research Vol. 26 (17) Springer Science and Business Media LLC

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