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Moon, C. K., Song, H. J., Kim, J. K., Park, J. H., Jang, S. J., Yoo, J-B., Park, H-R., Lee, Byung-Teak (2001) Chemical-vapor-deposition growth and characterization of epitaxial 3C–SiC films on SOI substrates with thin silicon top layers. Journal of Materials Research, 16 (1) 24-27 doi:10.1557/jmr.2001.0007

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Reference TypeJournal (article/letter/editorial)
TitleChemical-vapor-deposition growth and characterization of epitaxial 3C–SiC films on SOI substrates with thin silicon top layers
JournalJournal of Materials Research
AuthorsMoon, C. K.Author
Song, H. J.Author
Kim, J. K.Author
Park, J. H.Author
Jang, S. J.Author
Yoo, J-B.Author
Park, H-R.Author
Lee, Byung-TeakAuthor
Year2001 (January)Volume16
Issue1
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1557/jmr.2001.0007Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID17107315Long-form Identifiermindat:1:5:17107315:9
GUID0
Full ReferenceMoon, C. K., Song, H. J., Kim, J. K., Park, J. H., Jang, S. J., Yoo, J-B., Park, H-R., Lee, Byung-Teak (2001) Chemical-vapor-deposition growth and characterization of epitaxial 3C–SiC films on SOI substrates with thin silicon top layers. Journal of Materials Research, 16 (1) 24-27 doi:10.1557/jmr.2001.0007
Plain TextMoon, C. K., Song, H. J., Kim, J. K., Park, J. H., Jang, S. J., Yoo, J-B., Park, H-R., Lee, Byung-Teak (2001) Chemical-vapor-deposition growth and characterization of epitaxial 3C–SiC films on SOI substrates with thin silicon top layers. Journal of Materials Research, 16 (1) 24-27 doi:10.1557/jmr.2001.0007
In(2001, January) Journal of Materials Research Vol. 16 (1) Springer Science and Business Media LLC

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