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Liliental-Weber, Z., dos Reis, Roberto (2024) Effects of structural defects on optical properties of InxGa1−xN layers and quantum wells. Journal of Applied Physics, 135 (9) doi:10.1063/5.0185713

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Reference TypeJournal (article/letter/editorial)
TitleEffects of structural defects on optical properties of InxGa1−xN layers and quantum wells
JournalJournal of Applied Physics
AuthorsLiliental-Weber, Z.Author
dos Reis, RobertoAuthor
Year2024 (March 7)Volume135
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/5.0185713Search in ResearchGate
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Mindat Ref. ID17199009Long-form Identifiermindat:1:5:17199009:8
GUID0
Full ReferenceLiliental-Weber, Z., dos Reis, Roberto (2024) Effects of structural defects on optical properties of InxGa1−xN layers and quantum wells. Journal of Applied Physics, 135 (9) doi:10.1063/5.0185713
Plain TextLiliental-Weber, Z., dos Reis, Roberto (2024) Effects of structural defects on optical properties of InxGa1−xN layers and quantum wells. Journal of Applied Physics, 135 (9) doi:10.1063/5.0185713
In(2024, March) Journal of Applied Physics Vol. 135 (9) AIP Publishing

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Khan, N., Li, J. (2006) Effects of compressive strain on optical properties of InxGa1−xN∕GaN quantum wells. Applied Physics Letters, 89 (15). 151916pp. doi:10.1063/1.2362587
Lü, W., Li, D. B., Li, C. R., Shen, F., Zhang, Z. (2004) Effect of critical thickness on structural and optical properties of InxGa1−xN/GaN multiple quantum wells. Journal of Applied Physics, 95 (8). 4362-4366 doi:10.1063/1.1667010
Liliental-Weber, Z., Ogletree, D. F., Yu, K. M., Hawkridge, M., Domagala, J. Z., Bak-Misiuk, J., Berman, A. E., Emara, A., Bedair, S. (2011) Structural defects and cathodoluminescence of InxGa1-xN layers. physica status solidi (c), 8 (7). 2248-2250 doi:10.1002/pssc.201001087
Liliental-Weber, Z., dos Reis, R., Mancuso, M., Song, C.Y., Grzegory, I., Porowski, S., Bockowski, M. (2014) Structural defects in bulk GaN. Journal of Crystal Growth, 403. 66-71 doi:10.1016/j.jcrysgro.2014.06.022
Liliental-Weber, Z., Reis, Roberto dos, Weyher, Jan L., Staszczak, Grzegorz, Jakieła, Rafał (2016) The importance of structural inhomogeneity in GaN thin films. Journal of Crystal Growth, 456. 160-167 doi:10.1016/j.jcrysgro.2016.08.059
Liliental-Weber, Z., dos Reis, R., Sochacki, T., Bockowski, M. (2018) The influence of the substrate misorientation on the structural quality of GaN layers grown by HVPE. Journal of Crystal Growth, 498. 346-351 doi:10.1016/j.jcrysgro.2018.07.010
Chen, C. H., Chen, W. H., Chen, Y. F., Lin, T. Y. (2003) Piezoelectric, electro-optical, and photoelastic effects in InxGa1−xN/GaN multiple quantum wells. Applied Physics Letters, 83 (9). 1770-1772 doi:10.1063/1.1604176
Zahedi, Taher, Firouzeh, Zaker Hossein (2021) Efficient third-harmonic generation in asymmetric InxGa1-xN/InN double quantum wells. Journal of Applied Physics, 130 (9) 93104pp. doi:10.1063/5.0049701
Oh, Eunsoon, Sone, Cheolsoo, Nam, Okhyun, Park, Hyeongsoo, Park, Yongjo (2000) Comparison of Si doping effect in optical properties of GaN epilayers and InxGa1−xN quantum wells. Applied Physics Letters, 76 (22). 3242-3244 doi:10.1063/1.126594
Lü, W., Li, D. B., Li, C. R., Zhang, Z. (2004) Generation and behavior of pure-edge threading misfit dislocations in InxGa1−xN∕GaN multiple quantum wells. Journal of Applied Physics, 96 (9). 5267-5270 doi:10.1063/1.1803633
Huang, Wen-Deng, Chen, Guang-De, Ren, Ya-Jie (2012) Effect of ternary mixed crystals on interface optical phonons in wurtizte InxGa1−xN/GaN quantum wells. Journal of Applied Physics, 112 (5). 53704pp. doi:10.1063/1.4748173
 
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