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Shen, Yang, Zhu, Jianfeng, Zhang, Qihao, Zhu, Hua, Fang, Qianglong, Yang, Xiaodong, Wang, Baolin (2024) Transition from Schottky to Ohmic contacts in 2D Ge/GaAs heterostructures with high tunneling probability. Physical Chemistry Chemical Physics, 26 (11) 8842-8849 doi:10.1039/d3cp06189b

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Reference TypeJournal (article/letter/editorial)
TitleTransition from Schottky to Ohmic contacts in 2D Ge/GaAs heterostructures with high tunneling probability
JournalPhysical Chemistry Chemical Physics
AuthorsShen, YangAuthor
Zhu, JianfengAuthor
Zhang, QihaoAuthor
Zhu, HuaAuthor
Fang, QianglongAuthor
Yang, XiaodongAuthor
Wang, BaolinAuthor
Year2024Volume26
Issue11
PublisherRoyal Society of Chemistry (RSC)
DOIdoi:10.1039/d3cp06189bSearch in ResearchGate
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Mindat Ref. ID17222757Long-form Identifiermindat:1:5:17222757:5
GUID0
Full ReferenceShen, Yang, Zhu, Jianfeng, Zhang, Qihao, Zhu, Hua, Fang, Qianglong, Yang, Xiaodong, Wang, Baolin (2024) Transition from Schottky to Ohmic contacts in 2D Ge/GaAs heterostructures with high tunneling probability. Physical Chemistry Chemical Physics, 26 (11) 8842-8849 doi:10.1039/d3cp06189b
Plain TextShen, Yang, Zhu, Jianfeng, Zhang, Qihao, Zhu, Hua, Fang, Qianglong, Yang, Xiaodong, Wang, Baolin (2024) Transition from Schottky to Ohmic contacts in 2D Ge/GaAs heterostructures with high tunneling probability. Physical Chemistry Chemical Physics, 26 (11) 8842-8849 doi:10.1039/d3cp06189b
In(2024) Physical Chemistry Chemical Physics Vol. 26 (11) Royal Society of Chemistry (RSC)

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