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Chen, Zhengyang, Lan, Zhangsheng, Lin, Yiran, Nishimura, Tomonori, Lee, Choonghyun, Zhao, Yi (2024) Optimizing interface properties of HfO2/Si0.73Ge0.27 gate stacks through sulfur passivation and post-deposition annealing. Journal of Applied Physics, 135 (12) doi:10.1063/5.0195430

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Reference TypeJournal (article/letter/editorial)
TitleOptimizing interface properties of HfO2/Si0.73Ge0.27 gate stacks through sulfur passivation and post-deposition annealing
JournalJournal of Applied Physics
AuthorsChen, ZhengyangAuthor
Lan, ZhangshengAuthor
Lin, YiranAuthor
Nishimura, TomonoriAuthor
Lee, ChoonghyunAuthor
Zhao, YiAuthor
Year2024 (March 28)Volume135
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/5.0195430Search in ResearchGate
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Mindat Ref. ID17236447Long-form Identifiermindat:1:5:17236447:8
GUID0
Full ReferenceChen, Zhengyang, Lan, Zhangsheng, Lin, Yiran, Nishimura, Tomonori, Lee, Choonghyun, Zhao, Yi (2024) Optimizing interface properties of HfO2/Si0.73Ge0.27 gate stacks through sulfur passivation and post-deposition annealing. Journal of Applied Physics, 135 (12) doi:10.1063/5.0195430
Plain TextChen, Zhengyang, Lan, Zhangsheng, Lin, Yiran, Nishimura, Tomonori, Lee, Choonghyun, Zhao, Yi (2024) Optimizing interface properties of HfO2/Si0.73Ge0.27 gate stacks through sulfur passivation and post-deposition annealing. Journal of Applied Physics, 135 (12) doi:10.1063/5.0195430
In(2024, March) Journal of Applied Physics Vol. 135 (12) AIP Publishing

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