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Mircovich, Matthew A., Kouvetakis, John, Menéndez, José (2024) A practical theoretical model for Ge-like epitaxial diodes: I. The I–V characteristics. Journal of Applied Physics, 135 (12) doi:10.1063/5.0185557

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Reference TypeJournal (article/letter/editorial)
TitleA practical theoretical model for Ge-like epitaxial diodes: I. The I–V characteristics
JournalJournal of Applied Physics
AuthorsMircovich, Matthew A.Author
Kouvetakis, JohnAuthor
Menéndez, JoséAuthor
Year2024 (March 28)Volume135
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/5.0185557Search in ResearchGate
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Mindat Ref. ID17236481Long-form Identifiermindat:1:5:17236481:2
GUID0
Full ReferenceMircovich, Matthew A., Kouvetakis, John, Menéndez, José (2024) A practical theoretical model for Ge-like epitaxial diodes: I. The I–V characteristics. Journal of Applied Physics, 135 (12) doi:10.1063/5.0185557
Plain TextMircovich, Matthew A., Kouvetakis, John, Menéndez, José (2024) A practical theoretical model for Ge-like epitaxial diodes: I. The I–V characteristics. Journal of Applied Physics, 135 (12) doi:10.1063/5.0185557
In(2024, March) Journal of Applied Physics Vol. 135 (12) AIP Publishing

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Mircovich, Matthew A., Kouvetakis, John, Menéndez, José (2025) A practical theoretical model for Ge-like epitaxial diodes. II. Matching the experimental optical responsivity in pin devices. Journal of Applied Physics, 137 (9). doi:10.1063/5.0235516
Roucka, Radek, An, YuJin, Chizmeshya, Andrew V. G., Tolle, John, Kouvetakis, John, D'Costa, Vijay R., Menéndez, José, Crozier, Peter (2006) Epitaxial semimetallic HfxZr1−xB2 templates for optoelectronic integration on silicon. Applied Physics Letters, 89 (24). 242110pp. doi:10.1063/1.2403189
Menéndez, J., Kouvetakis, J. (2004) Type-I Ge∕Ge1−x−ySixSny strained-layer heterostructures with a direct Ge bandgap. Applied Physics Letters, 85 (7). 1175-1177 doi:10.1063/1.1784032
Fang, Y.-Y., Tolle, J., Roucka, R., Chizmeshya, A. V. G., Kouvetakis, John, D’Costa, V. R., Menéndez, José (2007) Perfectly tetragonal, tensile-strained Ge on Ge1−ySny buffered Si(100). Applied Physics Letters, 90 (6). 61915pp. doi:10.1063/1.2472273
Kouvetakis, John, Wallace, Patrick M., Xu, Chi, Ringwala, Dhruve A., Mircovich, Matthew, Roldan, Manuel A., Webster, Preston T., Grant, Perry C., Menéndez, José (2023) Synthesis of High Sn Content Ge1–x–ySixSny (0.1 < y < 0.22) Semiconductors on Si for MWIR Direct Band Gap Applications. ACS Applied Materials & Interfaces, 15 (41) 48382-48394 doi:10.1021/acsami.3c10230
Xu, Chi, Kouvetakis, John, Menéndez, José (2019) Doping dependence of the optical dielectric function in n-type germanium. Journal of Applied Physics, 125 (8). 85704pp. doi:10.1063/1.5084277
Mathews, Jay, Roucka, Radek, Xie, Junqi, Yu, Shui-Qing, Menéndez, José, Kouvetakis, John (2009) Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications. Applied Physics Letters, 95 (13). 133506pp. doi:10.1063/1.3238327
Tolle, John, Roucka, Radek, Chizmeshya, Andrew V. G., Kouvetakis, John, D’Costa, Vijay R., Menéndez, José (2006) Compliant tin-based buffers for the growth of defect-free strained heterostructures on silicon. Applied Physics Letters, 88 (25). 252112pp. doi:10.1063/1.2213014
Menéndez, José (2009) Analytical strain relaxation model for Si1−xGex/Si epitaxial layers. Journal of Applied Physics, 105 (6). 63519pp. doi:10.1063/1.3093889
Hu, Changwu, Tsong, I. S. T., D’Costa, V., Menéndez, J., Crozier, P. A., Tolle, J., Kouvetakis, J. (2005) Synthesis of Si-Ge nanoscale structures via deposition of single-source (GeH3)4−nSiHn hydrides. Applied Physics Letters, 87 (8). 83101pp. doi:10.1063/1.2011792
Hu, C.-W., Menéndez, J., Tsong, I. S. T., Tolle, J., Chizmeshya, A. V. G., Ritter, Cole, Kouvetakis, J. (2005) Low-temperature pathways to Ge-rich Si1−xGex alloys via single-source hydride chemistry. Applied Physics Letters, 87 (18). 181903pp. doi:10.1063/1.2117620
 
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