Eguchi, Keitaro, Murata, Hideyuki (2024) The ionization energy of α-sexithiophene and p-sexiphenyl in 2D and 3D thin films grown on silicon oxide surfaces. Physical Chemistry Chemical Physics, 26 (11) 8687-8694 doi:10.1039/d3cp04475k
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | The ionization energy of α-sexithiophene and p-sexiphenyl in 2D and 3D thin films grown on silicon oxide surfaces | ||
Journal | Physical Chemistry Chemical Physics | ||
Authors | Eguchi, Keitaro | Author | |
Murata, Hideyuki | Author | ||
Year | 2024 | Volume | 26 |
Issue | 11 | ||
Publisher | Royal Society of Chemistry (RSC) | ||
DOI | doi:10.1039/d3cp04475kSearch in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 17238445 | Long-form Identifier | mindat:1:5:17238445:2 |
GUID | 0 | ||
Full Reference | Eguchi, Keitaro, Murata, Hideyuki (2024) The ionization energy of α-sexithiophene and p-sexiphenyl in 2D and 3D thin films grown on silicon oxide surfaces. Physical Chemistry Chemical Physics, 26 (11) 8687-8694 doi:10.1039/d3cp04475k | ||
Plain Text | Eguchi, Keitaro, Murata, Hideyuki (2024) The ionization energy of α-sexithiophene and p-sexiphenyl in 2D and 3D thin films grown on silicon oxide surfaces. Physical Chemistry Chemical Physics, 26 (11) 8687-8694 doi:10.1039/d3cp04475k | ||
In | (2024) Physical Chemistry Chemical Physics Vol. 26 (11) Royal Society of Chemistry (RSC) |
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