Hattori, T., Kobayashi, H., Ohtake, H., Akinaga, K., Kurosaki, Y., Takei, A., Sekiguchi, A., Maeda, K., Takubo, C., Yamada, M. (2024) Etching selectivity of SiO2 to SiN using HF and methanol at higher pressures up to 900 Pa. Japanese Journal of Applied Physics, 63 (6) 6 doi:10.35848/1347-4065/ad3fc7
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Etching selectivity of SiO2 to SiN using HF and methanol at higher pressures up to 900 Pa | ||
| Journal | Japanese Journal of Applied Physics | ||
| Authors | Hattori, T. | Author | |
| Kobayashi, H. | Author | ||
| Ohtake, H. | Author | ||
| Akinaga, K. | Author | ||
| Kurosaki, Y. | Author | ||
| Takei, A. | Author | ||
| Sekiguchi, A. | Author | ||
| Maeda, K. | Author | ||
| Takubo, C. | Author | ||
| Yamada, M. | Author | ||
| Year | 2024 (June 3) | Volume | 63 |
| Issue | 6 | ||
| Publisher | IOP Publishing | ||
| DOI | doi:10.35848/1347-4065/ad3fc7Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 17433148 | Long-form Identifier | mindat:1:5:17433148:5 |
| GUID | 0 | ||
| Full Reference | Hattori, T., Kobayashi, H., Ohtake, H., Akinaga, K., Kurosaki, Y., Takei, A., Sekiguchi, A., Maeda, K., Takubo, C., Yamada, M. (2024) Etching selectivity of SiO2 to SiN using HF and methanol at higher pressures up to 900 Pa. Japanese Journal of Applied Physics, 63 (6) 6 doi:10.35848/1347-4065/ad3fc7 | ||
| Plain Text | Hattori, T., Kobayashi, H., Ohtake, H., Akinaga, K., Kurosaki, Y., Takei, A., Sekiguchi, A., Maeda, K., Takubo, C., Yamada, M. (2024) Etching selectivity of SiO2 to SiN using HF and methanol at higher pressures up to 900 Pa. Japanese Journal of Applied Physics, 63 (6) 6 doi:10.35848/1347-4065/ad3fc7 | ||
| In | (2024, June) Japanese Journal of Applied Physics Vol. 63 (6) Japan Society of Applied Physics | ||
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