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Wang, Xi-Chen, Lu, Xiao-Li, He, Yun-Long, Zhang, Fang, Shao, Yu, Liu, Peng, Zhang, Zhi-Nan, Zheng, Xue-Feng, Chen, Wei-Wei, Wang, Lei, Yang, Jun, Ma, Xiao-Hua, Hao, Yue (2024) Quasi-2D high mobility channel E-mode β -Ga2O3 MOSFET with Johnson FOM of 7.56 THz·V. Applied Physics Letters, 125 (6) doi:10.1063/5.0223330

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Reference TypeJournal (article/letter/editorial)
TitleQuasi-2D high mobility channel E-mode β -Ga2O3 MOSFET with Johnson FOM of 7.56 THz·V
JournalApplied Physics Letters
AuthorsWang, Xi-ChenAuthor
Lu, Xiao-LiAuthor
He, Yun-LongAuthor
Zhang, FangAuthor
Shao, YuAuthor
Liu, PengAuthor
Zhang, Zhi-NanAuthor
Zheng, Xue-FengAuthor
Chen, Wei-WeiAuthor
Wang, LeiAuthor
Yang, JunAuthor
Ma, Xiao-HuaAuthor
Hao, YueAuthor
Year2024 (August 5)Volume125
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/5.0223330Search in ResearchGate
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Mindat Ref. ID17536809Long-form Identifiermindat:1:5:17536809:1
GUID0
Full ReferenceWang, Xi-Chen, Lu, Xiao-Li, He, Yun-Long, Zhang, Fang, Shao, Yu, Liu, Peng, Zhang, Zhi-Nan, Zheng, Xue-Feng, Chen, Wei-Wei, Wang, Lei, Yang, Jun, Ma, Xiao-Hua, Hao, Yue (2024) Quasi-2D high mobility channel E-mode β -Ga2O3 MOSFET with Johnson FOM of 7.56 THz·V. Applied Physics Letters, 125 (6) doi:10.1063/5.0223330
Plain TextWang, Xi-Chen, Lu, Xiao-Li, He, Yun-Long, Zhang, Fang, Shao, Yu, Liu, Peng, Zhang, Zhi-Nan, Zheng, Xue-Feng, Chen, Wei-Wei, Wang, Lei, Yang, Jun, Ma, Xiao-Hua, Hao, Yue (2024) Quasi-2D high mobility channel E-mode β -Ga2O3 MOSFET with Johnson FOM of 7.56 THz·V. Applied Physics Letters, 125 (6) doi:10.1063/5.0223330
In(2024, August) Applied Physics Letters Vol. 125 (6) AIP Publishing

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