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Li, Ying, Xu, Lianqiang, Yang, Chen, Xu, Linqiang, Liu, Shiqi, Yang, Zongmeng, Li, Qiuhui, Dong, Jichao, Yang, Jie, Lu, Jing (2024) Electrical Contacts in Monolayer MoSi2N4 Transistors. ACS Applied Materials & Interfaces, 16 (37). doi:10.1021/acsami.4c09880

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Reference TypeJournal (article/letter/editorial)
TitleElectrical Contacts in Monolayer MoSi2N4 Transistors
JournalACS Applied Materials & Interfaces
AuthorsLi, YingAuthor
Xu, LianqiangAuthor
Yang, ChenAuthor
Xu, LinqiangAuthor
Liu, ShiqiAuthor
Yang, ZongmengAuthor
Li, QiuhuiAuthor
Dong, JichaoAuthor
Yang, JieAuthor
Lu, JingAuthor
Year2024 (September 18)Volume16
Issue37
PublisherAmerican Chemical Society (ACS)
DOIdoi:10.1021/acsami.4c09880Search in ResearchGate
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Mindat Ref. ID17610040Long-form Identifiermindat:1:5:17610040:9
GUID0
Full ReferenceLi, Ying, Xu, Lianqiang, Yang, Chen, Xu, Linqiang, Liu, Shiqi, Yang, Zongmeng, Li, Qiuhui, Dong, Jichao, Yang, Jie, Lu, Jing (2024) Electrical Contacts in Monolayer MoSi2N4 Transistors. ACS Applied Materials & Interfaces, 16 (37). doi:10.1021/acsami.4c09880
Plain TextLi, Ying, Xu, Lianqiang, Yang, Chen, Xu, Linqiang, Liu, Shiqi, Yang, Zongmeng, Li, Qiuhui, Dong, Jichao, Yang, Jie, Lu, Jing (2024) Electrical Contacts in Monolayer MoSi2N4 Transistors. ACS Applied Materials & Interfaces, 16 (37). doi:10.1021/acsami.4c09880
In(2024, September) ACS Applied Materials & Interfaces Vol. 16 (37). American Chemical Society (ACS)

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