Kawanago, Takamasa, Muneta, Iriya, Hoshii, Takuya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Wakabayashi, Hitoshi (2025) Fabrication of n-type and p-type WSe₂ field-effect transistors and their low-voltage CMOS inverter operation. Japanese Journal of Applied Physics, 64 (2). doi:10.35848/1347-4065/adb43a

References Listed

These are the references the publisher has listed as being connected to the article. Please check the article itself for the full list of references which may differ. Not all references are currently linkable within the Digital Library.

	Wang, Qing Hua, Kalantar-Zadeh, Kourosh, Kis, Andras, Coleman, Jonathan N., Strano, Michael S. (2012) Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nature Nanotechnology, 7 (11). 699-712 doi:10.1038/nnano.2012.193
	Taur (1998) , p. 1
	Akinwande, Deji, Huyghebaert, Cedric, Wang, Ching-Hua, Serna, Martha I., Goossens, Stijn, Li, Lain-Jong, Wong, H.-S. Philip, Koppens, Frank H. L. (2019) Graphene and two-dimensional materials for silicon technology. Nature, 573 (7775). 507-518 doi:10.1038/s41586-019-1573-9
	Podzorov, V., Gershenson, M. E., Kloc, Ch., Zeis, R., Bucher, E. (2004) High-mobility field-effect transistors based on transition metal dichalcogenides. Applied Physics Letters, 84 (17). 3301-3303 doi:10.1063/1.1723695
	Mortelmans (2024) Dig. VLSI Technology Symp. 3, 191
	Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V., Kis, A. (2011) Single-layer MoS2 transistors. Nature Nanotechnology, 6 (3). 147-150 doi:10.1038/nnano.2010.279
	Kawanago, Takamasa, Matsuzaki, Takahiro, Kajikawa, Ryosuke, Muneta, Iriya, Hoshii, Takuya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Wakabayashi, Hitoshi (2022) Experimental demonstration of high-gain CMOS inverter operation at low V dd down to 0.5 V consisting of WSe2 n/p FETs. Japanese Journal of Applied Physics, 61. doi:10.35848/1347-4065/ac3a8e
	Not Yet Imported: - journal-article : 10.1109/JEDS.2022.3224206 If you would like this item imported into the Digital Library, please contact us quoting Journal ID
	Lockhart de la Rosa, César J., Nourbakhsh, Amirhasan, Heyne, Markus, Asselberghs, Inge, Huyghebaert, Cedric, Radu, Iuliana, Heyns, Marc, De Gendt, Stefan (2017) Highly efficient and stable MoS2FETs with reversible n-doping using a dehydrated poly(vinyl-alcohol) coating. Nanoscale, 9. 258-265 doi:10.1039/c6nr06980k
	Klauk, Hagen, Zschieschang, Ute, Pflaum, Jens, Halik, Marcus (2007) Ultralow-power organic complementary circuits. Nature, 445 (7129). 745-748 doi:10.1038/nature05533
	Kawanago, Takamasa, Oda, Shunri (2016) Utilizing self-assembled-monolayer-based gate dielectrics to fabricate molybdenum disulfide field-effect transistors. Applied Physics Letters, 108 (4). 41605pp. doi:10.1063/1.4941084
	Jeon (2015) J. Mater. Chem. C 3, 2751
	Aikawa, Shinya, Kim, Sungjin, Thurakitseree, Theerapol, Einarsson, Erik, Inoue, Taiki, Chiashi, Shohei, Tsukagoshi, Kazuhito, Maruyama, Shigeo (2018) Carrier polarity engineering in carbon nanotube field-effect transistors by induced charges in polymer insulator. Applied Physics Letters, 112 (1). 13501pp. doi:10.1063/1.4994114
	Sze (2007)
	Schroder (2005)
	Allain, Adrien, Kang, Jiahao, Banerjee, Kaustav, Kis, Andras (2015) Electrical contacts to two-dimensional semiconductors. Nature Materials, 14 (12). 1195-1205 doi:10.1038/nmat4452
	Schulman, Daniel S., Arnold, Andrew J., Das, Saptarshi (2018) Contact engineering for 2D materials and devices. Chemical Society Reviews, 47. 3037-3058 doi:10.1039/c7cs00828g
	Liu, Yuan, Duan, Xidong, Huang, Yu, Duan, Xiangfeng (2018) Two-dimensional transistors beyond graphene and TMDCs. Chemical Society Reviews, 47. 6388-6409 doi:10.1039/c8cs00318a
	Tang, Cindy G., Syafiqah, Mazlan Nur, Koh, Qi-Mian, Zhao, Chao, Zaini, Jamal, Seah, Qiu-Jing, Cass, Michael J., Humphries, Martin J., Grizzi, Ilaria, Burroughes, Jeremy H., Png, Rui-Qi, Chua, Lay-Lay, Ho, Peter K. H. (2019) Multivalent anions as universal latent electron donors. Nature, 573 (7775). 519-525 doi:10.1038/s41586-019-1575-7
	Das, Saptarshi, Appenzeller, Joerg (2013) WSe2 field effect transistors with enhanced ambipolar characteristics. Applied Physics Letters, 103 (10). 103501pp. doi:10.1063/1.4820408
	Ohmori, K., Ahmet, P., Yoshitake, M., Chikyow, T., Shiraishi, K., Yamabe, K., Watanabe, H., Akasaka, Y., Nara, Y., Chang, K.-S., Green, M. L., Yamada, K. (2007) Influences of annealing in reducing and oxidizing ambients on flatband voltage properties of HfO2 gate stack structures. Journal of Applied Physics, 101 (8). 84118pp. doi:10.1063/1.2721384
	Ogawa () , p. 277
	Hasan, Musarrat, Park, Hokyung, Yang, Hyundoek, Hwang, Hyunsang, Jung, Hyung-Suk, Lee, Jong-Ho (2007) Ultralow work function of scandium metal gate with tantalum nitride interface layer for n-channel metal oxide semiconductor application. Applied Physics Letters, 90 (10). 103510pp. doi:10.1063/1.2711398
	Ali, Haider, Koul, Supriya, Gregory, Geoffrey, Bullock, James, Javey, Ali, Kushima, Akihiro, Davis, Kristopher O. (2018) Thermal Stability of Hole-Selective Tungsten Oxide: In Situ Transmission Electron Microscopy Study. Scientific Reports, 8. doi:10.1038/s41598-018-31053-w
	Not Yet Imported: - journal-article : 10.1021/acsaelm.1c00225 If you would like this item imported into the Digital Library, please contact us quoting Journal ID
	Tsuchiya () , p. 475
	Juelsholt, Mikkel, Anker, Andy S., Christiansen, Troels Lindahl, Jørgensen, Mads Ry Vogel, Kantor, Innokenty, Sørensen, Daniel Risskov, Jensen, Kirsten M. Ø. (2021) Size-induced amorphous structure in tungsten oxide nanoparticles. Nanoscale, 13 (47) 20144-20156 doi:10.1039/d1nr05991b
	Not Yet Imported: Nature Communications - journal-article : 10.1038/s41467-020-15776-x If you would like this item imported into the Digital Library, please contact us quoting Journal ID
	Fang, Nan, Nagashio, Kosuke (2018) Accumulation-Mode Two-Dimensional Field-Effect Transistor: Operation Mechanism and Thickness Scaling Rule. ACS Applied Materials & Interfaces, 10. 32355-32364 doi:10.1021/acsami.8b10687
	Not Yet Imported: - journal-article : 10.1021/acs.nanolett.5b00668 If you would like this item imported into the Digital Library, please contact us quoting Journal ID
	Not Yet Imported: Semiconductor Science and Technology - journal-article : 10.1088/0268-1242/31/10/105001 If you would like this item imported into the Digital Library, please contact us quoting Journal ID
	Pang ()
	Not Yet Imported: - journal-article : 10.1021/nn5009929 If you would like this item imported into the Digital Library, please contact us quoting Journal ID

See Also

These are possibly similar items as determined by title/reference text matching only.

	Kawanago, Takamasa, Matsuzaki, Takahiro, Kajikawa, Ryosuke, Muneta, Iriya, Hoshii, Takuya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Wakabayashi, Hitoshi (2022) Experimental demonstration of high-gain CMOS inverter operation at low V dd down to 0.5 V consisting of WSe2 n/p FETs. Japanese Journal of Applied Physics, 61. doi:10.35848/1347-4065/ac3a8e
	Tanigawa, Haruki, Matsuura, Kentaro, Muneta, Iriya, Hoshii, Takuya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Wakabayashi, Hitoshi (2020) Enhancement-mode accumulation capacitance–voltage characteristics in TiN/ALD-Al2O3/sputtered-MoS2 top-gated stacks. Japanese Journal of Applied Physics, 59. doi:10.35848/1347-4065/ab7fea
	Hamada, Masaya, Matsuura, Kentaro, Sakamoto, Takuro, Tanigawa, Haruki, Muneta, Iriya, Hoshii, Takuya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Wakabayashi, Hitoshi (2020) Hall-effect mobility enhancement of sputtered MoS2 film by sulfurization even through Al2O3 passivation film simultaneously preventing oxidation. Japanese Journal of Applied Physics, 59 (10) 105501 doi:10.35848/1347-4065/abb324
	Matsuura, Kentaro, Hamada, Masaya, Hamada, Takuya, Tanigawa, Haruki, Sakamoto, Takuro, Hori, Atsushi, Muneta, Iriya, Kawanago, Takamasa, Kakushima, Kuniyuki, Tsutsui, Kazuo, Ogura, Atsushi, Wakabayashi, Hitoshi (2020) Normally-off sputtered-MoS2 nMISFETs with TiN top-gate electrode all defined by optical lithography for chip-level integration. Japanese Journal of Applied Physics, 59 (8) 80906 doi:10.35848/1347-4065/aba9a3
	Hamada, Takuya, Hamada, Masaya, Horiguchi, Taiga, Muneta, Iriya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Tatsumi, Tetsuya, Tomiya, Shigetaka, Wakabayashi, Hitoshi (2022) High Seebeck coefficient in PVD-WS2 film with grain size enlargement. Japanese Journal of Applied Physics, 61. doi:10.35848/1347-4065/ac3a93
	Li, An, Hoshii, Takuya, Tsutsui, Kazuo, Wakabayashi, Hitoshi, Kakushima, Kuniyuki (2025) Interface properties of SiC MOS devices with NH3 plasma nitridation of ultrathin SiO2 interfacial layer. Japanese Journal of Applied Physics, 64 (3). doi:10.35848/1347-4065/adb8b0
	Hamada, Masaya, Matsuura, Kentaro, Hamada, Takuya, Muneta, Iriya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Wakabayashi, Hitoshi (2021) ZrS2 symmetrical-ambipolar FETs with near-midgap TiN film for both top-gate electrode and Schottky-barrier contact. Japanese Journal of Applied Physics, 60. doi:10.35848/1347-4065/abd6d7
	Song, Jinhan, Ohta, Atsuhiro, Hoshii, Takuya, Wakabayashi, Hitoshi, Tsutsui, Kazuo, Kakushima, Kuniyuki (2021) High field-effect mobility with suppressed negative threshold voltage shift in 4H-SiC MOSFET with cerium oxide interfacial layer. Japanese Journal of Applied Physics, 60 (3) 30901 doi:10.35848/1347-4065/abdf7c
	Yamagishi, Tomohiko, Hori, Atsushi, Muneta, Iriya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Wakabayashi, Hitoshi (2020) Self-heating-aware cell design for p/n-vertically-integrated nanowire on FinFET beyond 3 nm technology node. Japanese Journal of Applied Physics, 59. doi:10.35848/1347-4065/ab6d83
	Tsai, Sung-Lin, Hoshii, Takuya, Wakabayashi, Hitoshi, Tsutsui, Kazuo, Chung, Tien-Kan, Chang, Edward Yi, Kakushima, Kuniyuki (2022) Field cycling behavior and breakdown mechanism of ferroelectric Al0.78Sc0.22N films. Japanese Journal of Applied Physics, 61. doi:10.35848/1347-4065/ac54f6
	Imai, Shinya, Hamada, Takuya, Hamada, Masaya, Shirokura, Takanori, Muneta, Iriya, Kakushima, Kuniyuki, Tatsumi, Tetsuya, Tomiya, Shigetaka, Tsutsui, Kazuo, Wakabayashi, Hitoshi (2021) Importance of crystallinity improvement in MoS2 film by compound sputtering even followed by post sulfurization. Japanese Journal of Applied Physics, 60. doi:10.35848/1347-4065/abdcae