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Ahearn, A. J., Law, J. T. (1956) Russell Effect in Silicon and Germanium. The Journal of Chemical Physics, 24 (3) 633-634 doi:10.1063/1.1742582

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Reference TypeJournal (article/letter/editorial)
TitleRussell Effect in Silicon and Germanium
JournalThe Journal of Chemical Physics
AuthorsAhearn, A. J.Author
Law, J. T.Author
Year1956 (March)Volume24
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.1742582
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Mindat Ref. ID2013488Long-form Identifiermindat:1:5:2013488:6
GUID0
Full ReferenceAhearn, A. J., Law, J. T. (1956) Russell Effect in Silicon and Germanium. The Journal of Chemical Physics, 24 (3) 633-634 doi:10.1063/1.1742582
Plain TextAhearn, A. J., Law, J. T. (1956) Russell Effect in Silicon and Germanium. The Journal of Chemical Physics, 24 (3) 633-634 doi:10.1063/1.1742582
In(1956, March) The Journal of Chemical Physics Vol. 24 (3) AIP Publishing

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Law, J. T., Meigs, P. S. (1955) Effect of Water Vapor on Grown Germanium and Silicon np Junction Units. Journal of Applied Physics, 26 (10). 1265-1273 doi:10.1063/1.1721887
Law, J. T., Garrett, C. G. B. (1956) Measurements of Surface Electrical Properties of Bombardment‐Cleaned Germanium. Journal of Applied Physics, 27 (6). 656 doi:10.1063/1.1722451
Adams, Carl E. (1956) Kentucky Section. American Journal of Physics, 24. 633-634 doi:10.1119/1.1934350
Giulotto, L., Lanzi, G., Tosca, L. (1956) Nuclear Relaxation and Molecular Association in Liquids. The Journal of Chemical Physics, 24 (3) 632-633 doi:10.1063/1.1742581
Eisinger, J., Law, J. T. (1959) Adsorption of Oxygen on Silicon. The Journal of Chemical Physics, 30 (2) 410-412 doi:10.1063/1.1729965
Waite, T. R., Wallace, W. E., Craig, R. S. (1956) Structures and Phase Relationships in the Tantalum‐Hydrogen System between — 145 and 70°C. The Journal of Chemical Physics, 24 (3) 634 doi:10.1063/1.1742583
Law, J. T. (1959) Adsorption of Hydrogen on Silicon. The Journal of Chemical Physics, 30 (6) 1568-1576 doi:10.1063/1.1730240
Reiss, Howard (1956) Theory of the Ionization of Hydrogen and Lithium in Silicon and Germanium. The Journal of Chemical Physics, 25 (4) 681-686 doi:10.1063/1.1743028
Kamins, T. I., Meyer, D. J. (1992) Effect of silicon source gas on silicon‐germanium chemical vapor deposition kinetics at atmospheric pressure. Applied Physics Letters, 61 (1). 90-92 doi:10.1063/1.107623
Law, J. T., Francois, E. E. (1956) Adsorption of Gases on a Silicon Surface. The Journal of Physical Chemistry, 60 (3). 353-358 doi:10.1021/j150537a025
Crawford, J. H., Schweinler, H. C., Stevens, D. K. (1956) Note on Hydrogen in Germanium and Silicon. Journal of Applied Physics, 27 (7). 839-840 doi:10.1063/1.1722499
 
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