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Rezgui, Kamel, Othmen, Riadh, Cavanna, Antonella, Ajlani, Hosni, Madouri, Ali, Oueslati, Meherzi (2013) The improvement of InAs/GaAs quantum dot properties capped by Graphene. Journal of Raman Spectroscopy, 44 (11). 1529-1533 doi:10.1002/jrs.4382

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Reference TypeJournal (article/letter/editorial)
TitleThe improvement of InAs/GaAs quantum dot properties capped by Graphene
JournalJournal of Raman Spectroscopy
AuthorsRezgui, KamelAuthor
Othmen, RiadhAuthor
Cavanna, AntonellaAuthor
Ajlani, HosniAuthor
Madouri, AliAuthor
Oueslati, MeherziAuthor
Year2013 (November)Volume44
Issue11
PublisherWiley
DOIdoi:10.1002/jrs.4382Search in ResearchGate
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Mindat Ref. ID2434902Long-form Identifiermindat:1:5:2434902:4
GUID0
Full ReferenceRezgui, Kamel, Othmen, Riadh, Cavanna, Antonella, Ajlani, Hosni, Madouri, Ali, Oueslati, Meherzi (2013) The improvement of InAs/GaAs quantum dot properties capped by Graphene. Journal of Raman Spectroscopy, 44 (11). 1529-1533 doi:10.1002/jrs.4382
Plain TextRezgui, Kamel, Othmen, Riadh, Cavanna, Antonella, Ajlani, Hosni, Madouri, Ali, Oueslati, Meherzi (2013) The improvement of InAs/GaAs quantum dot properties capped by Graphene. Journal of Raman Spectroscopy, 44 (11). 1529-1533 doi:10.1002/jrs.4382
In(2013, November) Journal of Raman Spectroscopy Vol. 44 (11) Wiley

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