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Bhat, Ishwara B., Patel, Kshyamasil, Taskar, Nikhil R., Ayers, John E., Ghandhi, Sorab K. (1988) X-ray diffraction studies of CdTe grown on InSb. Journal of Crystal Growth, 88 (1). 23-29 doi:10.1016/s0022-0248(98)90004-5

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Reference TypeJournal (article/letter/editorial)
TitleX-ray diffraction studies of CdTe grown on InSb
JournalJournal of Crystal Growth
AuthorsBhat, Ishwara B.Author
Patel, KshyamasilAuthor
Taskar, Nikhil R.Author
Ayers, John E.Author
Ghandhi, Sorab K.Author
Year1988 (April)Volume88
Issue1
PublisherElsevier BV
DOIdoi:10.1016/s0022-0248(98)90004-5Search in ResearchGate
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Mindat Ref. ID2780021Long-form Identifiermindat:1:5:2780021:6
GUID0
Full ReferenceBhat, Ishwara B., Patel, Kshyamasil, Taskar, Nikhil R., Ayers, John E., Ghandhi, Sorab K. (1988) X-ray diffraction studies of CdTe grown on InSb. Journal of Crystal Growth, 88 (1). 23-29 doi:10.1016/s0022-0248(98)90004-5
Plain TextBhat, Ishwara B., Patel, Kshyamasil, Taskar, Nikhil R., Ayers, John E., Ghandhi, Sorab K. (1988) X-ray diffraction studies of CdTe grown on InSb. Journal of Crystal Growth, 88 (1). 23-29 doi:10.1016/s0022-0248(98)90004-5
In(1988, April) Journal of Crystal Growth Vol. 88 (1) Elsevier BV

See Also

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Ghandhi, Sorab K., Taskar, Nikhil R., Bhat, Ishwara B. (1985) Growth of CdTe on GaAs by organometallic vapor phase heteroepitaxy. Applied Physics Letters, 47 (7). 742-745 doi:10.1063/1.96024
Taskar, N.R., Bhat, I.B., Ghandhi, S.K. (1986) MOVPE growth and characteristics of CdTe on InSb substrates. Journal of Crystal Growth, 77 (1). 480-484 doi:10.1016/0022-0248(86)90340-4
Bhat, Ishwara B., Ghandhi, Sorab K. (1986) The growth of mercury cadmium telluride by organometallic vapor phase epitaxy. Journal of Crystal Growth, 75 (2). 241-246 doi:10.1016/0022-0248(86)90033-3
Ghandhi, S. K., Taskar, N. R., Bhat, I. B. (1986) Effect of process conditions on the quality of CdTe grown on InSb by organometallic epitaxy. Applied Physics Letters, 49 (19). 1290-1292 doi:10.1063/1.97389
Ghandhi, Sorab K., Bhat, Ishwara B., Fardi, Hamid (1988) Organometallic epitaxy of HgCdTe on CdTeSe substrates with high compositional uniformity. Applied Physics Letters, 52 (5). 392-394 doi:10.1063/1.99476
Agnello, Paul D., Ghandhi, Sorab K. (1989) Alkyl exchange effects between triethylindium and trimethylgallium. Journal of Crystal Growth, 94 (2). 311-320 doi:10.1016/0022-0248(89)90004-3
Parat, K.K., Taskar, N.R., Bhat, I.B., Ghandhi, S.K. (1990) Annealing and electrical properties of Hg1−xCdxTe grown by OMVPE. Journal of Crystal Growth, 106 (4). 513-523 doi:10.1016/0022-0248(90)90024-f
Ghandhi, S. K., Taskar, N. R., Bhat, I. B. (1987) Arsenic‐dopedp‐CdTe layers grown by organometallic vapor phase epitaxy. Applied Physics Letters, 50 (14). 900-902 doi:10.1063/1.98027
Takemi, M, Mihashi, Y, Shiba, T, Aiga, M (1998) High-resolution X-ray diffraction studies on growth interrupted heterointerfaces grown by metalorganic vapor-phase epitaxy. Journal of Crystal Growth, 191 (1). 18-23 doi:10.1016/s0022-0248(98)00118-3
Taskar, N.R., Natarajan, V., Bhat, I.B., Grandhi, S.K. (1988) Extrinsic doped n- and p-type CdTe layers grown by organometallic vapor phase epitaxy. Journal of Crystal Growth, 86 (1). 228-232 doi:10.1016/0022-0248(90)90721-v
Baliga, B.Jayant, Ghandhi, Sorab K. (1974) Hillocks on epitaxial GaAs grown from trimethylgallium and arsine. Journal of Crystal Growth, 26 (2). 314-316 doi:10.1016/0022-0248(74)90262-0
 
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