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Chalmers, S.A., Kroemer, H., Gossard, A.C. (1991) The growth of (Al,Ga)Sb tilted superlattices and their heteroepitaxy with InAs to form corrugated-barrier quantum wells. Journal of Crystal Growth, 111 (1). 647-650 doi:10.1016/0022-0248(91)91057-h

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Reference TypeJournal (article/letter/editorial)
TitleThe growth of (Al,Ga)Sb tilted superlattices and their heteroepitaxy with InAs to form corrugated-barrier quantum wells
JournalJournal of Crystal Growth
AuthorsChalmers, S.A.Author
Kroemer, H.Author
Gossard, A.C.Author
Year1991 (May)Volume111
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(91)91057-hSearch in ResearchGate
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Mindat Ref. ID2801285Long-form Identifiermindat:1:5:2801285:4
GUID0
Full ReferenceChalmers, S.A., Kroemer, H., Gossard, A.C. (1991) The growth of (Al,Ga)Sb tilted superlattices and their heteroepitaxy with InAs to form corrugated-barrier quantum wells. Journal of Crystal Growth, 111 (1). 647-650 doi:10.1016/0022-0248(91)91057-h
Plain TextChalmers, S.A., Kroemer, H., Gossard, A.C. (1991) The growth of (Al,Ga)Sb tilted superlattices and their heteroepitaxy with InAs to form corrugated-barrier quantum wells. Journal of Crystal Growth, 111 (1). 647-650 doi:10.1016/0022-0248(91)91057-h
In(1991, May) Journal of Crystal Growth Vol. 111 (1) Elsevier BV

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Petroff, P.M., Miller, M.S., Lu, Y.T., Chalmers, S.A., Metiu, H., Kroemer, H., Gossard, A.C. (1991) MBE growth of tilted superlattices: advances and novel structures. Journal of Crystal Growth, 111 (1). 360-365 doi:10.1016/0022-0248(91)91001-q
Chalmers, S. A., Kroemer, H., Gossard, A. C. (1990) Step‐flow growth on strained surfaces: (Al,Ga)Sb tilted superlattices. Applied Physics Letters, 57 (17). 1751-1753 doi:10.1063/1.104056
Petroff, P.M., Gaines, J., Tsuchiya, M., Simes, R., Coldren, L., Kroemer, H., English, J., Gossard, A.C. (1989) Band gap modulation in two dimensions by MBE growth of tilted superlattices and applications to quantum confinement structures. Journal of Crystal Growth, 95 (1). 260-265 doi:10.1016/0022-0248(89)90397-7
Munekata, H., Smith, T.P., Chang, L.L. (1989) Heteroepitaxy of InAs quantum wells. Journal of Crystal Growth, 95 (1). 235-239 doi:10.1016/0022-0248(89)90390-4
Chow, D.H., Miles, R.H., Nieh, C.W., McGill, T.C. (1991) Growth of InAs/Ga1−xInxSb infrared superlattices. Journal of Crystal Growth, 111 (1). 683-687 doi:10.1016/0022-0248(91)91063-g
Kamei, H., Hayashi, H. (1991) OMVPE growth of GaInAs/InP and GaInAs/GaInAsP quantum wells. Journal of Crystal Growth, 107 (1). 567-572 doi:10.1016/0022-0248(91)90522-7
Miller, M.S., Pryor, C.E., Weman, H., Samoska, L.A., Kroemer, H., Petroff, P.M. (1991) Serpentine superlattice: concept and first results. Journal of Crystal Growth, 111 (1). 323-327 doi:10.1016/0022-0248(91)90994-g
Shigeta, M., Okano, Y., Seto, H., Katahama, H., Nishine, S., Kobayashi, K., Fujimoto, I. (1991) Si doping and MBE growth of GaAs on tilted (111)A substrates. Journal of Crystal Growth, 111 (1). 284-287 doi:10.1016/0022-0248(91)90986-f
Nguyen, Chanh, Kroemer, Herbert, Hu, Evelyn L., English, John H. (1993) Low-temperature (4.2–9K) transport along InAs-AlSb quantum wells with δ-doped barriers and superconducting niobium electrodes. Journal of Crystal Growth, 127 (1). 845-848 doi:10.1016/0022-0248(93)90745-i
Blank, H.-R, Mathis, S, Hall, E, Bhargava, S, Behres, A, Heuken, M, Kroemer, H, Narayanamurti, V (1998) Al(As,Sb) heterobarriers on InAs: growth, structural properties and electrical transport. Journal of Crystal Growth, 187 (1). 18-28 doi:10.1016/s0022-0248(97)00851-8
Kadow, C., Lin, H.-K., DahlstrĂśm, M., Rodwell, M., Gossard, A.C., Brar, B., Sullivan, G. (2003) Reduction of the unintentional background electron density in AlSb/InAs/AlSb quantum wells. Journal of Crystal Growth, 251 (1). 543-546 doi:10.1016/s0022-0248(02)02447-8
 
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