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Nakano, Yoshitaka, Ishiko, Masayasu, Tadano, Hiroshi, Myler, Uwe, Simpson, Peter (2000) Thermal behavior of He-irradiation-induced defects in silicon. Journal of Crystal Growth, 210 (1). 80-84 doi:10.1016/s0022-0248(99)00651-x

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Reference TypeJournal (article/letter/editorial)
TitleThermal behavior of He-irradiation-induced defects in silicon
JournalJournal of Crystal Growth
AuthorsNakano, YoshitakaAuthor
Ishiko, MasayasuAuthor
Tadano, HiroshiAuthor
Myler, UweAuthor
Simpson, PeterAuthor
Year2000 (March)Volume210
Issue1
PublisherElsevier BV
DOIdoi:10.1016/s0022-0248(99)00651-xSearch in ResearchGate
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Mindat Ref. ID2852004Long-form Identifiermindat:1:5:2852004:3
GUID0
Full ReferenceNakano, Yoshitaka, Ishiko, Masayasu, Tadano, Hiroshi, Myler, Uwe, Simpson, Peter (2000) Thermal behavior of He-irradiation-induced defects in silicon. Journal of Crystal Growth, 210 (1). 80-84 doi:10.1016/s0022-0248(99)00651-x
Plain TextNakano, Yoshitaka, Ishiko, Masayasu, Tadano, Hiroshi, Myler, Uwe, Simpson, Peter (2000) Thermal behavior of He-irradiation-induced defects in silicon. Journal of Crystal Growth, 210 (1). 80-84 doi:10.1016/s0022-0248(99)00651-x
In(2000, March) Journal of Crystal Growth Vol. 210 (1) Elsevier BV

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Nakano, Yoshitaka, Kachi, Tetsu, Tadano, Hiroshi, Kumar Malhan, Rajesh (2000) Effect of C/B sequential implantation on the B acceptors in 4H–SiC. Journal of Crystal Growth, 210 (1). 283-287 doi:10.1016/s0022-0248(99)00697-1
Shono, Y, Oka, T (2000) Complex defects in electron-irradiated ZnS. Journal of Crystal Growth, 210 (1). 278-282 doi:10.1016/s0022-0248(99)00696-x
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Jayavel, P, Kumar, J (2000) Investigations on the low-energy proton-induced defects on Ti/n-GaAs Schottky barrier diode parameters. Journal of Crystal Growth, 210 (1). 268-272 doi:10.1016/s0022-0248(99)00694-6
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