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Song, J.S, Chang, J.H, Cho, M.W, Hanada, T, Yao, T (2001) Growth and characterization of ZnSe/BeTe superlattices. Journal of Crystal Growth, 229 (1). 104-108 doi:10.1016/s0022-0248(01)01102-2

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Reference TypeJournal (article/letter/editorial)
TitleGrowth and characterization of ZnSe/BeTe superlattices
JournalJournal of Crystal Growth
AuthorsSong, J.SAuthor
Chang, J.HAuthor
Cho, M.WAuthor
Hanada, TAuthor
Yao, TAuthor
Year2001 (July)Volume229
Issue1
PublisherElsevier BV
DOIdoi:10.1016/s0022-0248(01)01102-2Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID2860997Long-form Identifiermindat:1:5:2860997:9
GUID0
Full ReferenceSong, J.S, Chang, J.H, Cho, M.W, Hanada, T, Yao, T (2001) Growth and characterization of ZnSe/BeTe superlattices. Journal of Crystal Growth, 229 (1). 104-108 doi:10.1016/s0022-0248(01)01102-2
Plain TextSong, J.S, Chang, J.H, Cho, M.W, Hanada, T, Yao, T (2001) Growth and characterization of ZnSe/BeTe superlattices. Journal of Crystal Growth, 229 (1). 104-108 doi:10.1016/s0022-0248(01)01102-2
In(2001, July) Journal of Crystal Growth Vol. 229 (1) Elsevier BV

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Song, J.S., Chang, J.H., Oh, D.C., Kim, J.J., Cho, M.W., Makino, H., Hanada, T., Yao, T. (2003) Optimization of ZnSe growth on miscut GaAs substrates by molecular beam epitaxy. Journal of Crystal Growth, 249 (1). 128-143 doi:10.1016/s0022-0248(02)02129-2
Song, J.S, Chang, J.H, Hong, S.K, Cho, M.W, Makino, H, Hanada, T, Yao, T (2002) Improvement in crystallinity of ZnSe by inserting a low-temperature buffer layer between the ZnSe epilayer and the GaAs substrate. Journal of Crystal Growth, 242 (1). 95-103 doi:10.1016/s0022-0248(02)01355-6
Cho, M.W, Hong, S.K, Chang, J.H, Saeki, S, Nakajima, M, Yao, T (2000) MBE grown BeTe and ZnBeTe films as a new p-contact layer of ZnSe-based II–VI lasers. Journal of Crystal Growth, 214. 487-491 doi:10.1016/s0022-0248(00)00136-6
Cho, M.W, Chang, J.H, Koh, K.W, Yao, T (1999) Molecular beam epitaxy growth of Be-chalcogenides and fabrication of ZnSe/ZnMgBeSe laser structures. Journal of Crystal Growth, 201. 957-960 doi:10.1016/s0022-0248(98)01505-x
Yamazaki, Y, Chang, J.H, Cho, M.W, Sekiguchi, T, Yao, T (2000) Selective-area growth of ZnSe on patterned GaAs(001) substrates by molecular beam epitaxy. Journal of Crystal Growth, 214. 202-206 doi:10.1016/s0022-0248(00)00082-8
Koh, K.W., Cho, M.W., Zhu, Z., Hanada, T., Isshiki, M., Yao, T. (1998) Growth of ZnSe on misoriented GaAs(1 1 0) surface by molecular beam epitaxy. Journal of Crystal Growth, 184. 46-50 doi:10.1016/s0022-0248(98)80291-1
Koh, K.W, Cho, M.W, Zhu, Z, Hanada, T, Yoo, K.H, Isshiki, M, Yao, T (1998) Growth of ZnSe on GaAs(110) surfaces by molecular beam epitaxy. Journal of Crystal Growth, 186 (4). 528-534 doi:10.1016/s0022-0248(97)00831-2
Song, J.S., Chang, J.H., Lee, H.Y., Oh, D.C., Kim, J.J., Makino, H., Cho, M.W., Yao, T. (2003) Control and determination of ZnMgBeSe quaternary alloy composition. Journal of Crystal Growth, 258 (3). 368-373 doi:10.1016/s0022-0248(03)01558-6
Koo, B.H, Hanada, T, Makino, H, Chang, J.H, Yao, T (2001) RHEED investigation of the formation process of InAs quantum dots on (100) InAlAs/InP for application to photonic devices in the 1.55μm range. Journal of Crystal Growth, 229 (1). 142-146 doi:10.1016/s0022-0248(01)01109-5
Oh, D.C., Chang, J.H., Takai, T., Song, J.S., Godo, K., Park, Y.K., Shindo, K., Yao, T. (2003) Electrical properties of heavily Al-doped ZnSe grown by molecular beam epitaxy. Journal of Crystal Growth, 251 (1). 607-611 doi:10.1016/s0022-0248(02)02383-7
Gerthsen, D., Walter, T., Fischer, F., Gerhard, T., Waag, A., Landwehr, G. (2000) Structural properties and relaxation behavior of short-period BeTe/ZnSe superlattices. Journal of Crystal Growth, 214. 330-334 doi:10.1016/s0022-0248(00)00103-2
 
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