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Moon, Yong-Tae, Kim, Dong-Joon, Park, Jin-Sub, Oh, Jeong-Tak, Kim, Yoon-Seok, Park, Nae-Man, Kim, Baek-Hyun, Park, Seong-Ju (2003) Growth of self-assembled nanosize InGaN/GaN multiple quantum wells embedded in amorphous SiNx by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 248. 494-497 doi:10.1016/s0022-0248(02)01869-9

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Reference TypeJournal (article/letter/editorial)
TitleGrowth of self-assembled nanosize InGaN/GaN multiple quantum wells embedded in amorphous SiNx by metalorganic vapor phase epitaxy
JournalJournal of Crystal Growth
AuthorsMoon, Yong-TaeAuthor
Kim, Dong-JoonAuthor
Park, Jin-SubAuthor
Oh, Jeong-TakAuthor
Kim, Yoon-SeokAuthor
Park, Nae-ManAuthor
Kim, Baek-HyunAuthor
Park, Seong-JuAuthor
Year2003 (February)Volume248
PublisherElsevier BV
DOIdoi:10.1016/s0022-0248(02)01869-9Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID2870596Long-form Identifiermindat:1:5:2870596:3
GUID0
Full ReferenceMoon, Yong-Tae, Kim, Dong-Joon, Park, Jin-Sub, Oh, Jeong-Tak, Kim, Yoon-Seok, Park, Nae-Man, Kim, Baek-Hyun, Park, Seong-Ju (2003) Growth of self-assembled nanosize InGaN/GaN multiple quantum wells embedded in amorphous SiNx by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 248. 494-497 doi:10.1016/s0022-0248(02)01869-9
Plain TextMoon, Yong-Tae, Kim, Dong-Joon, Park, Jin-Sub, Oh, Jeong-Tak, Kim, Yoon-Seok, Park, Nae-Man, Kim, Baek-Hyun, Park, Seong-Ju (2003) Growth of self-assembled nanosize InGaN/GaN multiple quantum wells embedded in amorphous SiNx by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 248. 494-497 doi:10.1016/s0022-0248(02)01869-9
In(2003) Journal of Crystal Growth Vol. 248. Elsevier BV

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Song, Keun-Man, Kim, Dong-Joon, Moon, Yong-Tae, Park, Seong-Ju (2001) Characteristics of GaN grown by metalorganic chemical vapor deposition using trimethylgallium and triethylgallium. Journal of Crystal Growth, 233 (3). 439-445 doi:10.1016/s0022-0248(01)01605-0
Kim, Dong-Joon, Moon, Yong-Tae, Song, Keun-Man, Choi, Chel-Jong, Ok, Young-Woo, Seong, Tae-Yeon, Park, Seong-Ju (2000) Structural and optical properties of InGaN/GaN multiple quantum wells: The effect of the number of InGaN/GaN pairs. Journal of Crystal Growth, 221 (1). 368-372 doi:10.1016/s0022-0248(00)00715-6
Park, Il-Kyu, Kwon, Min-Ki, Baek, Sung-Ho, Ok, Young-Woo, Seong, Tae-Yeon, Park, Seong-Ju, Kim, Yoon-Seok, Moon, Yong-Tae, Kim, Dong-Joon (2005) Enhancement of phase separation in the InGaN layer for self-assembled In-rich quantum dots. Applied Physics Letters, 87 (6). 61906pp. doi:10.1063/1.2008365
Park, J S, Moon, Yong-Tae, Kim, Dong-Joon, Park, Nae-Man, Yao, T, Park, Seong-Ju (2008) Improvement in the optical and structural properties of InGaN/GaN multiple quantum wells by indium predeposition. Journal of Physics D: Applied Physics, 41. 165103pp. doi:10.1088/0022-3727/41/16/165103
Moon, Yong-Tae, Kim, Dong-Joon, Park, Jin-Sub, Oh, Jeong-Tak, Lee, Ji-Myon, Ok, Young-Woo, Kim, Hyunsoo, Park, Seong-Ju (2001) Temperature dependence of photoluminescence of InGaN films containing In-rich quantum dots. Applied Physics Letters, 79 (5). 599-601 doi:10.1063/1.1389327
Kim, Hyun Jin, Na, Hyunseok, Kwon, Soon-Yong, Seo, Hui-Chan, Kim, Hee Jin, Shin, Yoori, Lee, Keon-Hun, Kim, Dong Hyuk, Oh, Hye Jeong, Yoon, Sukho, Sone, Cheolsoo, Park, Yongjo, Yoon, Euijoon (2004) Growth of In-rich InGaN/GaN quantum dots by metalorganic chemical vapor deposition. Journal of Crystal Growth, 269 (1). 95-99 doi:10.1016/j.jcrysgro.2004.05.039
Kim, Dong-Joon, Moon, Yong-Tae, Song, Keun-Man, Park, Seong-Ju (2001) Effect of Barrier Thickness on the Interface and Optical Properties of InGaN/GaN Multiple Quantum Wells. Japanese Journal of Applied Physics, 40. 3085-3088 doi:10.1143/jjap.40.3085
Moon, Yong-Tae, Kim, Dong-Joon, Song, Keun-Man, Choi, Chel-Jong, Han, Sang-Heon, Seong, Tae-Yeon, Park, Seong-Ju (2001) Effects of thermal and hydrogen treatment on indium segregation in InGaN/GaN multiple quantum wells. Journal of Applied Physics, 89 (11). 6514-6518 doi:10.1063/1.1370368
Kim, Baek-Hyun, Cho, Chang-Hee, Kim, Tae-Wook, Park, Nae-Man, Sung, Gun Yong, Park, Seong-Ju (2005) Photoluminescence of silicon quantum dots in silicon nitride grown by NH3 and SiH4. Applied Physics Letters, 86 (9). 91908pp. doi:10.1063/1.1872211
Cho, Chang-Hee, Kim, Baek-Hyun, Kim, Tae-Wook, Park, Seong-Ju, Park, Nae-Man, Sung, Gun-Yong (2005) Effect of hydrogen passivation on charge storage in silicon quantum dots embedded in silicon nitride film. Applied Physics Letters, 86 (14). 143107pp. doi:10.1063/1.1894595
Na, Hyunseok, Kim, Hyun Jin, Yoon, Euijoon, Sone, Cheolsoo, Park, Yongjo (2003) Arsenic incorporation and growth mode of GaNAs grown by low-pressure metal-organic chemical vapor deposition. Journal of Crystal Growth, 248. 437-440 doi:10.1016/s0022-0248(02)01824-9
 
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